Geodesic
Heterocontact between semiconductor and dielectric with an electron trap in the layer close to the contact
Doklady Akademii Nauk, Tome 180 (1968) no. 1, pp. 52-55 Cet article a éte moissonné depuis la source Math-Net.Ru

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     author = {\`E. I. Adirovich and L. A. Doubrovsky},
     title = {Heterocontact between semiconductor and dielectric with an electron trap in the layer close to the contact},
     journal = {Doklady Akademii Nauk},
     pages = {52--55},
     year = {1968},
     volume = {180},
     number = {1},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/DAN_1968_180_1_a13/}
}
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È. I. Adirovich; L. A. Doubrovsky. Heterocontact between semiconductor and dielectric with an electron trap in the layer close to the contact. Doklady Akademii Nauk, Tome 180 (1968) no. 1, pp. 52-55. http://geodesic.mathdoc.fr/item/DAN_1968_180_1_a13/