Doklady Akademii Nauk, Tome 172 (1967) no. 3, pp. 588-590
Citer cet article
P. V. Pavlov; È. V. Shitova. The structure of the oxide films obtained by bombarding the surface of silicon with oxygen ions. Doklady Akademii Nauk, Tome 172 (1967) no. 3, pp. 588-590. http://geodesic.mathdoc.fr/item/DAN_1967_172_3_a19/
@article{DAN_1967_172_3_a19,
author = {P. V. Pavlov and \`E. V. Shitova},
title = {The structure of the oxide films obtained by bombarding the surface of silicon with oxygen ions},
journal = {Doklady Akademii Nauk},
pages = {588--590},
year = {1967},
volume = {172},
number = {3},
language = {ru},
url = {http://geodesic.mathdoc.fr/item/DAN_1967_172_3_a19/}
}
TY - JOUR
AU - P. V. Pavlov
AU - È. V. Shitova
TI - The structure of the oxide films obtained by bombarding the surface of silicon with oxygen ions
JO - Doklady Akademii Nauk
PY - 1967
SP - 588
EP - 590
VL - 172
IS - 3
UR - http://geodesic.mathdoc.fr/item/DAN_1967_172_3_a19/
LA - ru
ID - DAN_1967_172_3_a19
ER -
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%A È. V. Shitova
%T The structure of the oxide films obtained by bombarding the surface of silicon with oxygen ions
%J Doklady Akademii Nauk
%D 1967
%P 588-590
%V 172
%N 3
%U http://geodesic.mathdoc.fr/item/DAN_1967_172_3_a19/
%G ru
%F DAN_1967_172_3_a19
