Geodesic
The structure of the oxide films obtained by bombarding the surface of silicon with oxygen ions
Doklady Akademii Nauk, Tome 172 (1967) no. 3, pp. 588-590 Cet article a éte moissonné depuis la source Math-Net.Ru

Voir la notice de l'article

@article{DAN_1967_172_3_a19,
     author = {P. V. Pavlov and \`E. V. Shitova},
     title = {The structure of the oxide films obtained by bombarding the surface of silicon with oxygen ions},
     journal = {Doklady Akademii Nauk},
     pages = {588--590},
     year = {1967},
     volume = {172},
     number = {3},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/DAN_1967_172_3_a19/}
}
TY  - JOUR
AU  - P. V. Pavlov
AU  - È. V. Shitova
TI  - The structure of the oxide films obtained by bombarding the surface of silicon with oxygen ions
JO  - Doklady Akademii Nauk
PY  - 1967
SP  - 588
EP  - 590
VL  - 172
IS  - 3
UR  - http://geodesic.mathdoc.fr/item/DAN_1967_172_3_a19/
LA  - ru
ID  - DAN_1967_172_3_a19
ER  - 
%0 Journal Article
%A P. V. Pavlov
%A È. V. Shitova
%T The structure of the oxide films obtained by bombarding the surface of silicon with oxygen ions
%J Doklady Akademii Nauk
%D 1967
%P 588-590
%V 172
%N 3
%U http://geodesic.mathdoc.fr/item/DAN_1967_172_3_a19/
%G ru
%F DAN_1967_172_3_a19
P. V. Pavlov; È. V. Shitova. The structure of the oxide films obtained by bombarding the surface of silicon with oxygen ions. Doklady Akademii Nauk, Tome 172 (1967) no. 3, pp. 588-590. http://geodesic.mathdoc.fr/item/DAN_1967_172_3_a19/