Geodesic
The structure of the oxide films obtained by bombarding the surface of silicon with oxygen ions
Doklady Akademii Nauk, Tome 172 (1967) no. 3, pp. 588-590.

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     author = {P. V. Pavlov and \`E. V. Shitova},
     title = {The structure of the oxide films obtained by bombarding the surface of silicon with oxygen ions},
     journal = {Doklady Akademii Nauk},
     pages = {588--590},
     publisher = {mathdoc},
     volume = {172},
     number = {3},
     year = {1967},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/DAN_1967_172_3_a19/}
}
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P. V. Pavlov; È. V. Shitova. The structure of the oxide films obtained by bombarding the surface of silicon with oxygen ions. Doklady Akademii Nauk, Tome 172 (1967) no. 3, pp. 588-590. http://geodesic.mathdoc.fr/item/DAN_1967_172_3_a19/