Doklady Akademii Nauk, Tome 163 (1965) no. 3, pp. 663-666
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Ya. A. Ugai; Yu. P. Zaval'skii; V. A. Ugai; S. A. Mostovaya; L. A. Bityutskaya. Tin arsenide – a new intermetallic semiconductor. Doklady Akademii Nauk, Tome 163 (1965) no. 3, pp. 663-666. http://geodesic.mathdoc.fr/item/DAN_1965_163_3_a29/
@article{DAN_1965_163_3_a29,
author = {Ya. A. Ugai and Yu. P. Zaval'skii and V. A. Ugai and S. A. Mostovaya and L. A. Bityutskaya},
title = {Tin arsenide~{\textendash} a new intermetallic semiconductor},
journal = {Doklady Akademii Nauk},
pages = {663--666},
year = {1965},
volume = {163},
number = {3},
language = {ru},
url = {http://geodesic.mathdoc.fr/item/DAN_1965_163_3_a29/}
}
TY - JOUR
AU - Ya. A. Ugai
AU - Yu. P. Zaval'skii
AU - V. A. Ugai
AU - S. A. Mostovaya
AU - L. A. Bityutskaya
TI - Tin arsenide – a new intermetallic semiconductor
JO - Doklady Akademii Nauk
PY - 1965
SP - 663
EP - 666
VL - 163
IS - 3
UR - http://geodesic.mathdoc.fr/item/DAN_1965_163_3_a29/
LA - ru
ID - DAN_1965_163_3_a29
ER -
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%A V. A. Ugai
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%A L. A. Bityutskaya
%T Tin arsenide – a new intermetallic semiconductor
%J Doklady Akademii Nauk
%D 1965
%P 663-666
%V 163
%N 3
%U http://geodesic.mathdoc.fr/item/DAN_1965_163_3_a29/
%G ru
%F DAN_1965_163_3_a29
