Doklady Akademii Nauk, Tome 152 (1963) no. 3, pp. 647-650
Citer cet article
E. E. Gutman; I. A. Myasnikov. The effect of the adsorption of free radicals on the contact potential of $n$-semiconductors. Doklady Akademii Nauk, Tome 152 (1963) no. 3, pp. 647-650. http://geodesic.mathdoc.fr/item/DAN_1963_152_3_a39/
@article{DAN_1963_152_3_a39,
author = {E. E. Gutman and I. A. Myasnikov},
title = {The effect of the adsorption of free radicals on the contact potential of $n$-semiconductors},
journal = {Doklady Akademii Nauk},
pages = {647--650},
year = {1963},
volume = {152},
number = {3},
language = {ru},
url = {http://geodesic.mathdoc.fr/item/DAN_1963_152_3_a39/}
}
TY - JOUR
AU - E. E. Gutman
AU - I. A. Myasnikov
TI - The effect of the adsorption of free radicals on the contact potential of $n$-semiconductors
JO - Doklady Akademii Nauk
PY - 1963
SP - 647
EP - 650
VL - 152
IS - 3
UR - http://geodesic.mathdoc.fr/item/DAN_1963_152_3_a39/
LA - ru
ID - DAN_1963_152_3_a39
ER -
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%T The effect of the adsorption of free radicals on the contact potential of $n$-semiconductors
%J Doklady Akademii Nauk
%D 1963
%P 647-650
%V 152
%N 3
%U http://geodesic.mathdoc.fr/item/DAN_1963_152_3_a39/
%G ru
%F DAN_1963_152_3_a39
