Geodesic
The effect of the adsorption of free radicals on the contact potential of $n$-semiconductors
Doklady Akademii Nauk, Tome 152 (1963) no. 3, pp. 647-650 Cet article a éte moissonné depuis la source Math-Net.Ru

Voir la notice de l'article

@article{DAN_1963_152_3_a39,
     author = {E. E. Gutman and I. A. Myasnikov},
     title = {The effect of the adsorption of free radicals on the contact potential of $n$-semiconductors},
     journal = {Doklady Akademii Nauk},
     pages = {647--650},
     year = {1963},
     volume = {152},
     number = {3},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/DAN_1963_152_3_a39/}
}
TY  - JOUR
AU  - E. E. Gutman
AU  - I. A. Myasnikov
TI  - The effect of the adsorption of free radicals on the contact potential of $n$-semiconductors
JO  - Doklady Akademii Nauk
PY  - 1963
SP  - 647
EP  - 650
VL  - 152
IS  - 3
UR  - http://geodesic.mathdoc.fr/item/DAN_1963_152_3_a39/
LA  - ru
ID  - DAN_1963_152_3_a39
ER  - 
%0 Journal Article
%A E. E. Gutman
%A I. A. Myasnikov
%T The effect of the adsorption of free radicals on the contact potential of $n$-semiconductors
%J Doklady Akademii Nauk
%D 1963
%P 647-650
%V 152
%N 3
%U http://geodesic.mathdoc.fr/item/DAN_1963_152_3_a39/
%G ru
%F DAN_1963_152_3_a39
E. E. Gutman; I. A. Myasnikov. The effect of the adsorption of free radicals on the contact potential of $n$-semiconductors. Doklady Akademii Nauk, Tome 152 (1963) no. 3, pp. 647-650. http://geodesic.mathdoc.fr/item/DAN_1963_152_3_a39/