Geodesic
Stability of hydrodynamic model for semiconductor
Archivum mathematicum, Tome 41 (2005) no. 1, pp. 37-58

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In this paper we study the stability of transonic strong shock solutions of the steady state one-dimensional unipolar hydrodynamic model for semiconductors in the isentropic case. The approach is based on the construction of a pseudo-local symmetrizer and on the paradifferential calculus with parameters, which combines the work of Bony-Meyer and the introduction of a large parameter.
Classification : 35B35, 35L50, 35L60, 35L67, 35S50, 76H05, 76X05, 82D37
Keywords: transonic shock waves; stability; hydrodynamic models; semiconductors 
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     author = {Rosini, Massimiliano Daniele},
     title = {Stability of hydrodynamic model for semiconductor},
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     zbl = {1112.35020},
     language = {en},
     url = {http://geodesic.mathdoc.fr/item/ARM_2005__41_1_a4/}
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Rosini, Massimiliano Daniele. Stability of hydrodynamic model for semiconductor. Archivum mathematicum, Tome 41 (2005) no. 1, pp. 37-58. http://geodesic.mathdoc.fr/item/ARM_2005__41_1_a4/