Geodesic
Nonlinear boundary value problems describing mobile carrier transport in semiconductor devices
Applications of Mathematics, Tome 46 (2001) no. 5, pp. 383-400

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The present paper describes mobile carrier transport in semiconductor devices with constant densities of ionized impurities. For this purpose we use one-dimensional partial differential equations. The work gives the proofs of global existence of solutions of systems of such kind, their bifurcations and their stability under the corresponding assumptions.
DOI : 10.1023/A:1013708427592
Classification : 35B35, 35B40, 35D05, 35F20, 35Q20, 82D37
Keywords: nonlinear boundary value problem; asymptotic behaviour of solutions; semiconductors; carrier transport; constant densities of ionized impurities; interior transition layer phenomena 
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     title = {Nonlinear boundary value problems describing mobile carrier transport in semiconductor devices},
     journal = {Applications of Mathematics},
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Borevich, E. Z.; Chistyakov, V. M. Nonlinear boundary value problems describing mobile carrier transport in semiconductor devices. Applications of Mathematics, Tome 46 (2001) no. 5, pp. 383-400. doi: 10.1023/A:1013708427592

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