@article{ZVMMF_2013_53_6_a11,
author = {A. M. Blokhin and B. V. Semisalov},
title = {On an algorithm for finding the electric potential distribution in the {DG-MOSFET} transistor},
journal = {\v{Z}urnal vy\v{c}islitelʹnoj matematiki i matemati\v{c}eskoj fiziki},
pages = {979--1003},
year = {2013},
volume = {53},
number = {6},
language = {ru},
url = {http://geodesic.mathdoc.fr/item/ZVMMF_2013_53_6_a11/}
}
TY - JOUR AU - A. M. Blokhin AU - B. V. Semisalov TI - On an algorithm for finding the electric potential distribution in the DG-MOSFET transistor JO - Žurnal vyčislitelʹnoj matematiki i matematičeskoj fiziki PY - 2013 SP - 979 EP - 1003 VL - 53 IS - 6 UR - http://geodesic.mathdoc.fr/item/ZVMMF_2013_53_6_a11/ LA - ru ID - ZVMMF_2013_53_6_a11 ER -
%0 Journal Article %A A. M. Blokhin %A B. V. Semisalov %T On an algorithm for finding the electric potential distribution in the DG-MOSFET transistor %J Žurnal vyčislitelʹnoj matematiki i matematičeskoj fiziki %D 2013 %P 979-1003 %V 53 %N 6 %U http://geodesic.mathdoc.fr/item/ZVMMF_2013_53_6_a11/ %G ru %F ZVMMF_2013_53_6_a11
A. M. Blokhin; B. V. Semisalov. On an algorithm for finding the electric potential distribution in the DG-MOSFET transistor. Žurnal vyčislitelʹnoj matematiki i matematičeskoj fiziki, Tome 53 (2013) no. 6, pp. 979-1003. http://geodesic.mathdoc.fr/item/ZVMMF_2013_53_6_a11/
[1] Grasser T., Tang T.-W., Kosina H., Selberher S., “A rewiew of hydrodynamic and energy-transport models for semiconductor device simulation”, Proc. IEEE, 91:2 (2003), 251–274 | DOI
[2] Hailiang Li, Markowich P. A., “A review of hydrodynamical models for semiconductors: asymptotic behavior”, Boletim da Sociedade Brasileira de Math., 32:3 (2001), 321–342 | DOI | MR | Zbl
[3] Abdallah N. V., Degond P., “On a hierarchy of macroscopic models for semiconductors”, J. Math. Phys., 37:2 (1996), 3308–3333 | MR
[4] Blotekjaer K., “Transport equations for electrons in two-valley semiconductors”, IEEE Trans. Electron Devices ED, 17 (1970), 38–47 | DOI
[5] Anile A. M., Romano V., “Non parabolic band transport in semiconductors: closure of the moment equations”, Cont. Mech. Thermodyn., 11 (1999), 307–325 | DOI | MR | Zbl
[6] Romano V., “Non parabolic band transport in semiconductors: closure of the production terms in the moment equations”, Cont. Mech. Thermodyn., 12 (2000), 31–51 | DOI | MR | Zbl
[7] Blokhin A. M., Bushmanov R. S., Rudometova et al., “Linear asymptotic stability of the equilibrium state for the 2D MEP hydrodynamical model of charge transport in semiconductors”, Nonlinear Analys., 65 (2006), 1018–1038 | DOI | MR | Zbl
[8] Blokhin A. M., Ibragimova A. S., Semisalov B. V., “Konstruirovanie vychislitelnykh algoritmov dlya zadachi o ballisticheskom diode”, Zh. vychisl. matem. i matem. fiz., 50:1 (2010), 188–208 | MR | Zbl
[9] Blokhin A. M., Boyarsky S. A., Semisalov B. V., “On an approach to the construction of difference schemes for the moment equations of charge transport in semiconductors”, Le Matematiche, LXIV:I (2009), 77–91 | MR | Zbl
[10] Blokhin A. M., Semisalov B. V., “Konstruirovanie odnogo klassa vychislitelnykh skhem v zadache o ballisticheskom diode”, Matem. modelirovanie, 22:7 (2010), 3–21 | MR | Zbl
[11] Blokhin A. M., Ibragimova A. S., “K voprosu o vychislenii elektricheskogo potentsiala dlya 2D kremnievogo tranzistora s nanokanalom iz oksida kremniya”, Matem. modelirovanie, 22:9 (2010), 79–94 | MR | Zbl
[12] Blokhin A. M., Ibragimova A. S., Semisalov B. V., “Konstruirovanie vychislitelnogo algoritma dlya sistemy momentnykh uravnenii, opisyvayuschikh perenos zaryada v poluprovodnikakh”, Matem. modelirovanie, 21:4 (2009), 15–34 | MR | Zbl
[13] Blokhin A. M., Ibragimova A. S., “Numerical method for 2D simulation of a silicon MESFET with a hydrodynamical model based on the maximum entropy principle”, SIAM J. Sci. Comp., 31:3 (2009), 2015–2046 | DOI | MR | Zbl
[14] Blokhin A. M., Semisalov B. V., “Design of numerical algorithms for the problem of charge transport in a 2D silicon MOSFET transistor with a silicon oxide nanochannel”, J. Phys.: Conf. Ser., 291 (2011), 012016 http://iopscience.iop.org/1742-6596/291/1/012016 | DOI
[15] Blokhin A. M., Semisalov B. V., Ibragimova A. S., Chislennyi analiz zadach perenosa zaryada v poluprovodnikovykh ustroistvakh, Palmarium Academic Publishing, Saarbrucken, Germany, 2012
[16] Babenko K. I., Osnovy chislennogo analiza, NITs “Regulyarnaya i khaotich. dinamika”, M.–Izhevsk, 2002
[17] Blokhin A. M., Alaev R. D., Integraly energii i ikh prilozheniya k issledovaniyu ustoichivosti raznostnykh skhem, Novosibirsk, 1993 | MR
[18] Haiyan Jiang, Wei Cai, “Effect of boundary treatments on quantum transport current in the Green's function and Wigner distribution methods for a nano-scale DG-MOSFET”, J. Comp. Phys., 229 (2010), 4461–4475 | DOI | Zbl
[19] Romano V., “2D Numerical simulation of the MEP energy-transport model with a finite difference scheme”, J. Comp. Phys., 221 (2007), 439–468 | DOI | MR | Zbl
[20] Lab C., Caussignac P., “An energy-transport model for semiconductor heterostructure devices: application to AlGaAs/GaAs MODFETs”, COMPEL, 18:1 (1999), 61–76 | DOI | Zbl
[21] Berezin I. S., Zhidkov N. P., Metody vychislenii, v. 2, Fizmatgiz, M., 1962, 620 pp. | MR
[22] Matsokin A. M., Sorokin S. B., Chislennye metody, Kurs lektsii dlya studentov mekhan.-matem. fak-ta NGU i Vyssh. kolledzha informatiki, v. 1, Novosibirsk, 2006, 132 pp.