Geodesic
Construction of numerical algorithms for the ballistic diode problem
Žurnal vyčislitelʹnoj matematiki i matematičeskoj fiziki, Tome 50 (2010) no. 1, pp. 188-208 Cet article a éte moissonné depuis la source Math-Net.Ru

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Numerical algorithms for finding stationary solutions to a hydrodynamic model of charge transport in semiconductors are proposed and described in detail. 
@article{ZVMMF_2010_50_1_a13,
     author = {A. M. Blokhin and A. S. Ibragimova and B. V. Semisalov},
     title = {Construction of numerical algorithms for the ballistic diode problem},
     journal = {\v{Z}urnal vy\v{c}islitelʹnoj matematiki i matemati\v{c}eskoj fiziki},
     pages = {188--208},
     year = {2010},
     volume = {50},
     number = {1},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/ZVMMF_2010_50_1_a13/}
}
TY  - JOUR
AU  - A. M. Blokhin
AU  - A. S. Ibragimova
AU  - B. V. Semisalov
TI  - Construction of numerical algorithms for the ballistic diode problem
JO  - Žurnal vyčislitelʹnoj matematiki i matematičeskoj fiziki
PY  - 2010
SP  - 188
EP  - 208
VL  - 50
IS  - 1
UR  - http://geodesic.mathdoc.fr/item/ZVMMF_2010_50_1_a13/
LA  - ru
ID  - ZVMMF_2010_50_1_a13
ER  - 
%0 Journal Article
%A A. M. Blokhin
%A A. S. Ibragimova
%A B. V. Semisalov
%T Construction of numerical algorithms for the ballistic diode problem
%J Žurnal vyčislitelʹnoj matematiki i matematičeskoj fiziki
%D 2010
%P 188-208
%V 50
%N 1
%U http://geodesic.mathdoc.fr/item/ZVMMF_2010_50_1_a13/
%G ru
%F ZVMMF_2010_50_1_a13
A. M. Blokhin; A. S. Ibragimova; B. V. Semisalov. Construction of numerical algorithms for the ballistic diode problem. Žurnal vyčislitelʹnoj matematiki i matematičeskoj fiziki, Tome 50 (2010) no. 1, pp. 188-208. http://geodesic.mathdoc.fr/item/ZVMMF_2010_50_1_a13/

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