Geodesic
Parallel implementation of stochastic cellular automata model of electron-hole recombination in 2D and 3D heterogeneous semiconductors
Vestnik Ûžno-Uralʹskogo gosudarstvennogo universiteta. Seriâ Vyčislitelʹnaâ matematika i informatika, Tome 6 (2017) no. 1, pp. 87-103 Cet article a éte moissonné depuis la source Math-Net.Ru

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Parallel programs implementing stochastic cellular automata (CA) model of electron-hole recombination in an inhomogeneous semiconductor for two- and three-dimensional cases are developed. The spatio-temporaldistributions of particles are investigated by the CA simulation. Spatial separation of electrons and holes withclusters formation is found and analyzed. Parallel implementation of the CA model allows us to calculateintegral characteristics of the recombination process (particle densities and radiative intensity) in acceptable time. Recombination kinetics in the vicinity of the recombination centers and diffusion in two- and three-dimensionalspace is investigated using the parallel program.
Keywords: electron-hole recombination, semiconductor, stochastic cellular automaton, radiative intensity.
Mots-clés : parallel implementation 
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     title = {Parallel implementation of stochastic cellular automata model of electron-hole recombination in {2D} and {3D} heterogeneous semiconductors},
     journal = {Vestnik \^U\v{z}no-Uralʹskogo gosudarstvennogo universiteta. Seri\^a Vy\v{c}islitelʹna\^a matematika i informatika},
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K. K. Sabelfeld; A. E. Kireeva. Parallel implementation of stochastic cellular automata model of electron-hole recombination in 2D and 3D heterogeneous semiconductors. Vestnik Ûžno-Uralʹskogo gosudarstvennogo universiteta. Seriâ Vyčislitelʹnaâ matematika i informatika, Tome 6 (2017) no. 1, pp. 87-103. http://geodesic.mathdoc.fr/item/VYURV_2017_6_1_a5/

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