Geodesic
Modeling of chemical vapor deposition for growth of thin films
Vestnik Ûžno-Uralʹskogo gosudarstvennogo universiteta. Seriâ Vyčislitelʹnaâ matematika i informatika, no. 1 (2012), pp. 19-30 Cet article a éte moissonné depuis la source Math-Net.Ru

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Most of the tasks that are associated with many aspects of nanotechnology development are essentially interdisciplinary by its nature. One of the most striking example is the use of gas-phase synthesis problems in nanotechnology. In essence, these technologies are the realization of the processes of the solid state chemical deposition from gaseous substance supplied to the reaction zone. A classic experiment in the learning process has shown its weakness: not clear; does not allow to study the dependence of the final material characteristics from the different physical parameters of the system; time consuming and expensive. By these reasons experiment was replaced by a virtual experiment i.e. simulation. At the base of the work lies the development and testing of mathematical models using high-performance computing in the processes of gas-phase synthesis of nanostructures and nanomaterials in order to study and provide visualization of proceeding physical and chemical processes.
Keywords: nanotechnology industry, gas-phase synthesis nanomaterials, gas dynamics, physical and chemical processes.
Mots-clés : simulation 
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Yu. Boldyrev; K. Zamotin; E. Petukhov. Modeling of chemical vapor deposition for growth of thin films. Vestnik Ûžno-Uralʹskogo gosudarstvennogo universiteta. Seriâ Vyčislitelʹnaâ matematika i informatika, no. 1 (2012), pp. 19-30. http://geodesic.mathdoc.fr/item/VYURV_2012_1_a1/

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