Geodesic
Contribution of charged carriers resonance scattering to the broadening of cyclotron resonance absorption curve in quasi-two- and three-dimensional semiconductors
Vestnik Ûžno-Uralʹskogo gosudarstvennogo universiteta. Seriâ, Matematika, mehanika, fizika, Tome 6 (2014) no. 4, pp. 36-47
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Asymptotic formulas for the broadening of absorption curve of cyclotron resonance (CR) by the resonance scattering of electrons on atomic impurities were obtained with Maxwell’s distribution being taken into account. The estimations show that the possible resonance level ($\sim 0, 06$ meV) in quasi two-dimensional semiconductors is one or two orders less than in three-dimensional semiconductors ($\sim 1$ meV). This fact shows that the area of predominant resonance scattering in quasi-two-dimensional semiconductors is less than 1 K. The temperature plateau equal to $5\div 12$ K was found in $2\mathrm{D}$ absorption spectrum. The applicability of the results obtained is under discussion.
Keywords: cyclotron resonance; broadening absorption curve; resonance scattering; asymptotic formulas. 
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     title = {Contribution of charged carriers resonance scattering to the broadening of cyclotron resonance absorption curve in quasi-two- and three-dimensional semiconductors},
     journal = {Vestnik \^U\v{z}no-Uralʹskogo gosudarstvennogo universiteta. Seri\^a, Matematika, mehanika, fizika},
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T. T. Muratov. Contribution of charged carriers resonance scattering to the broadening of cyclotron resonance absorption curve in quasi-two- and three-dimensional semiconductors. Vestnik Ûžno-Uralʹskogo gosudarstvennogo universiteta. Seriâ, Matematika, mehanika, fizika, Tome 6 (2014) no. 4, pp. 36-47. http://geodesic.mathdoc.fr/item/VYURM_2014_6_4_a5/

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