Comparison transfer matrix methods and scattering matrix method for investigation the optical properties of multilayer structures

N. V. Egorov ; A. G. Fedorov ; V. V. Trofimov

Vestnik Sankt-Peterburgskogo universiteta. Prikladnaâ matematika, informatika, processy upravleniâ, Tome 20 (2024) no. 4, pp. 432-445

Résumé

This article presents an analysis of transfer matrix method (TMM) and scattering matrix method (SMM) for determining reflection and transmission coefficients of thin films. Investigated single layer structures of semiconductor materials (Si, Ge, GaAs), noble metals (Ag, Au, Cu) and multilayer structure of Si. Numeric results were getting in two diapason wavelengths: $\lambda=0.2067$–$0.8267$ $\mu$m and $\lambda=0.2$–$20$ $\mu$m. In this work obtained with TMM and SMM the reflection and transmission coefficient of layer structures. Numerical results of reflection coefficients of all investigation structures were exactly match with literature data. But results we got for the transmission coefficients did not match of literature data for the both of method. This mismatch is investigated, as we assume from some of normalization coefficient, corresponding a refractive index of right side of medium which we didn't take into account.

Détail

Keywords: transfer matrix methods, scattering matrix method, layer structures.
Mots-clés : reflection coefficient, transmission coefficient

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