Associates of dot defects of various nature in $\mathrm{SiC}$-phase of semiconductor heterostructure of $\mathrm{SiC//Si}$, received by endotaksiya method

V. I. Chepurnov

Vestnik Samarskogo universiteta. Estestvennonaučnaâ seriâ, no. 7 (2014), pp. 145-162

Résumé

One of the main ways of increasing of reliability of sensors of physical quantities on the basis of high-temperature and radiation-hardened heterostructure of $\beta$-$\mathrm{SiC//Si}$ is the analysis of technological aspects of its forming (endotaksiya) regarding concentration distribution of dot defects of various nature, their probable models of association with participation of foreign impurity. Besides, the analysis of reversible processes of association opens ways of optimization of kinetics of diffusive mass transfer at phase transformation of substrate of silicon into a film of carbide of silicon. In the article dependences of concentration of neutral defects on factors of supersaturation of gas phase on conditional atomic concentration of carbon, from concentration of foreign impurity are given in a gas phase, from concentration of own defects of various nature having potential of formation of deep levels in the forbidden zone and potential of association. The analysis of the given dependences is made and recommendations about carrying out technological process of formation of difficult heterostructures of different function are made.

Détail

Keywords: associates and point (local) defects in semiconductors
Mots-clés : heterostructures, heteroendotaxy, silicon carbide on silicon substrate.

Bibliographie

[1] Casady J. B., Jonson R. W., “Status of silicon carbide (SiC) as a vide-bandgape semiconductor for high-temperature applications: a review”, Solide-State Elektronics, 39:10 (1996), 1409–1422 | DOI

[2] Zubrilov A. S., “Electric properties of heterojunctions 3C-SiC/Si”, Physics and equipment of semiconductors, 28:10 (1994), 1742–1748 (in Russian)

[3] P. A. Ivanov et al., “Powerful bipolar devices on the basis of silicon carbide. Review”, Physics and equipment of semiconductors, 39:8 (2005), 897–912 (in Russian)

[4] Medvedev N. I., Yuryeva N. I., Ivanovo A. L., “The electronic structure of cubic carbide of silicon with 3d-impurity in Si- and replacement C-positions”, Physics and equipment of semiconductors, 37:11 (2003), 1281–1284 (in Russian)

[5] V. I. Chepurnov et al., “Influence of alloying impurity on distribution of dot defects in SiC-Si heterostructure”, Vestnik of Samara State University. Natural Science series, 2008, no. 6(65), 352–366 (in Russian)

[6] Lebedev A. A., “The centers with deep levels in silicon carbide. Review”, Physics and equipment of semiconductors, 33:2 (1999), 129–155 (in Russian)

[7] Konstantinov A. I., “About the nature of dot defects of acceptor impurity generated at diffusion in silicon carbide”, Physics and equipment of semiconductors, 2:2 (1992), 272–279 (in Russian)

[8] Lowthe J. F., “Vacancies and divacansies in cubic silicon carbid”, J. Phys. C: Solid State Phys., 10 (1977), 2501–2509 | DOI

[9] Palatnik L. S., Papirov I. I., Focused crystallization, Metallurgiia, M., 1964, 408 pp. (in Russian)

[10] Chepurnov V. I., “Distribution of dot defects in the Si-phase interfaced to a SiC-phase, the endotaksiya of semiconductor heterostructures created by a method”, Vestnik of Samara State University. Natural-science series, 2012, no. 9(100), 164–179

[11] Milvidsky M. G., Osvensky I. B. S, tructural defects in epitaxial layers of semiconductors, Metallurgiia, M., 1985, 159 pp. (in Russian)

[12] V. I. Chepurnov et al., “Model of phenomena of transfer in system (Si–C–H) at a geteroendotaksiya of structures of SiC–Si”, Vestnik of Samara State University. Natural-science series, 2008, no. 6(65), 367–378 (in Russian)

[13] V. I. Chepurnov et al., “Features of nanodot defect formation in the structure of por-SiC|/Si received on diffusive technology for chemical sensors”, Vestnik of Samara State Technical University. Series: physics and mathematics sciences, 2009, no. 2(19), 99–106 (in Russian)

[14] Henish G., Roy R. (eds.), Silicon carbide, Mir, M., 1972, 386 pp. (in Russian)

[15] Chepurnov V. I., Sivakova K. P., “Analysis of dot defect formation in the homogeneous phase SiC which is forming in the course of an endotaksiya of heterostructure of SiC–Si”, Vestnik of Samara State University. Natural-science series, 2006, no. 9(49), 72–91 (in Russian)

[16] Kovtunenko P. V., Physical chemistry of solid body. Crystals with defects, Vysshaia shkola, M., 1993, 352 pp.

[17] Poling L. M., General chemistry, Mir, M., 1974, 846 pp. (in Russian)