Geodesic
Advanced semiconductor materials for the development of super-high frequencies and nanoelectronics
Vestnik Samarskogo universiteta. Estestvennonaučnaâ seriâ, no. 3 (2014), pp. 121-127

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The results of application of semi-conductor converters on the basis of silicon carbide as a sensitive super-high frequency signals recorder. It was also noted that this material is prospective in the development of such areas as medicine, aerospace equipment, high-speed communication lines. The necessity of silicon carbide is increasing for its application in nanoelectronics.
Mots-clés : silicon carbide
Keywords: electromagnetic emission, wireless EMF, Debye temperature, diamond. 
@article{VSGU_2014_3_a12,
     author = {A. N. Komov},
     title = {Advanced semiconductor materials for the development of super-high frequencies and nanoelectronics},
     journal = {Vestnik Samarskogo universiteta. Estestvennonau\v{c}na\^a seri\^a},
     pages = {121--127},
     publisher = {mathdoc},
     number = {3},
     year = {2014},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/VSGU_2014_3_a12/}
}
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A. N. Komov. Advanced semiconductor materials for the development of super-high frequencies and nanoelectronics. Vestnik Samarskogo universiteta. Estestvennonaučnaâ seriâ, no. 3 (2014), pp. 121-127. http://geodesic.mathdoc.fr/item/VSGU_2014_3_a12/