Mechanisms of degradation of electrophysical characteristics of mos-structures with high-$k$ dielectrics

M. B. Shalimova   ; V. S. Afanaskov   ; E. N. Khavdey

Vestnik Samarskogo universiteta. Estestvennonaučnaâ seriâ, no. 3 (2013), pp. 107-119

Résumé

Results of study of the processes of change of electrophysical characteristics are presented at various operating modes of МОS-structures and the analysis of the most probable mechanisms of degradation of structures was spent. The gate dielectric was made from rare-earth oxides (high-$k$ dielectrics). The estimation of influence of electric field and temperature on change of a charge of investigated structures was spent, the value of energetically density of states on the interface dielectric — semiconductor was defined.

Détail

Keywords: MOS capacitors, reliability, oxide breakdown; gate dielectric; oxides of other rare earth elements.

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