Geodesic
Mechanisms of degradation of electrophysical characteristics of mos-structures with high-$k$ dielectrics
Vestnik Samarskogo universiteta. Estestvennonaučnaâ seriâ, no. 3 (2013), pp. 107-119

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Results of study of the processes of change of electrophysical characteristics are presented at various operating modes of МОS-structures and the analysis of the most probable mechanisms of degradation of structures was spent. The gate dielectric was made from rare-earth oxides (high-$k$ dielectrics). The estimation of influence of electric field and temperature on change of a charge of investigated structures was spent, the value of energetically density of states on the interface dielectric — semiconductor was defined.
Keywords: MOS capacitors, reliability, oxide breakdown; gate dielectric; oxides of other rare earth elements. 
@article{VSGU_2013_3_a12,
     author = {M. B. Shalimova and V. S. Afanaskov and E. N. Khavdey},
     title = {Mechanisms of degradation of electrophysical characteristics of mos-structures with high-$k$ dielectrics},
     journal = {Vestnik Samarskogo universiteta. Estestvennonau\v{c}na\^a seri\^a},
     pages = {107--119},
     publisher = {mathdoc},
     number = {3},
     year = {2013},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/VSGU_2013_3_a12/}
}
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M. B. Shalimova; V. S. Afanaskov; E. N. Khavdey. Mechanisms of degradation of electrophysical characteristics of mos-structures with high-$k$ dielectrics. Vestnik Samarskogo universiteta. Estestvennonaučnaâ seriâ, no. 3 (2013), pp. 107-119. http://geodesic.mathdoc.fr/item/VSGU_2013_3_a12/