Distribution of point defects in the Si-faze including Sic-faze, formed by endotaxe method of semiconductor heterostructures

V. I. Chepurnov

Vestnik Samarskogo universiteta. Estestvennonaučnaâ seriâ, no. 9 (2012), pp. 164-179

Résumé

Heteroepitaxy layers of silicon carbide on silicon substrates is one of the best candidates for high-power, high-temperature and high-frequency applications in electronics. Solid-phase process of endotaxe of silicon carbide is accompanied by evolution of Si-phase into Sic-one in hydrogen hydrocarbon atmosphere at temperature range 1360–1380 $^{\circ}$C and normal pressure. The distribution of thermal intrinsic point defects of different nature in silicon substrates in dependence of the type of its conductivity and in conditions of isovalent doping of carbon is investigated in this paper.

Détail

Keywords: point (local) defect, heterostructure
Mots-clés : heteroendotaxe, silicon carbide on silicon substrate, dopant.

Bibliographie

[1] Casady J. B., Jonson R. W., “Status of silicon carbide (SiC) as a vide-bandgape semiconductor for high-temperature applications: a review”, Solide-State Elektronics, 39:10 (1996), 1409–1422 | DOI

[2] P. A. Ivanov i dr., “Moschnye bipolyarnye pribory na osnove karbida kremniya. Obzor”, Fizika i tekhnika poluprovodnikov, 39:8 (2005), 897–912

[3] Ivanov A. M., Strokan N. B., Lebedev A. A., “Radiatsionnaya stoikost shirokozonnogo materiala na primere SiS-detektorov yadernogo izlucheniya”, Zhurnal tekhnicheskoi fiziki, 82:4 (2012), 137–141

[4] Kaidanov V. I., Nemov S. A., Ravich Yu. I., “Samokompensatsiya elektricheski aktivnykh primesei sobstvennymi defektami v poluprovodnikakh”, Fizika i tekhnika poluprovodnikov, 28:3 (1994), 369–393

[5] Lebedev A. A., “Tsentry s glubokimi urovnyami v karbide kremniya. Obzor”, Fizika i tekhnika poluprovodnikov, 33:2 (1999), 129–155

[6] Medvedev N. I., Yureva N. I., Ivanovskii A. L., “Elektronnaya struktura kubicheskogo karbida kremniya s 3d-primesyami v Si- i C-pozitsiyakh zamescheniya”, Fizika i tekhnika poluprovodnikov, 37:11 (2003), 1281–1284

[7] Zubrilov A. S., “Elektricheskie svoistva geteroperekhodov 3S-SiC/Si”, Fizika i tekhnika poluprovodnikov, 28:10 (1994), 1742–1748

[8] Chepurnov V. I., Sivakova K. P., “Analiz tochechnogo defektoobrazovniya v gomogennoi faze SiC, formiruyuscheisya v protsesse endotaksii geterostruktury SiC-Si”, Vestnik SamGU. Estestvennonauchnaya seriya, 2006, no. 9(49), 72–91

[9] V. I. Chepurnov i dr., “Vliyanie legiruyuschei primesi na raspredelenie tochechnykh defektov v geterostrukture SiC-Si”, Vestnik SamGU. Estestvennonauchnaya seriya, 2008, no. 6(65), 352–366

[10] V. I. Chepurnov i dr., “Osobennosti nanotochechnogo defektoobrazovaniya v strukture por-SiC|/Si, poluchennoi po diffuzionnoi tekhnologii dlya khimicheskikh datchikov”, Vestnik Samarskogo gosudarstvennogo tekhnicheskogo universiteta. Ser.: Fiz.-mat. nauki, 2009, no. 2(19), 99–106

[11] V. I. Chepurnov i dr., “Model yavlenii perenosa v sisteme (Si-C-H) pri geteroendotaksii struktur SiC-Si”, Vestnik SamGU. Estestvennonauchnaya seriya, 2008, no. 6(65), 367–378

[12] Kovtunenko P. V., Fizicheskaya khimiya tverdogo tela. Kristally s defektami, Vysshaya shkola, M., 1993, 352 pp.

[13] Milvidskii M. G., Osvenskii V. B., Strukturnye defekty v monokristallicheskikh poluprovodnikakh, Metallurgiya, M., 1984, 255 pp.

[14] G. Khenish, R. Roi(red.), Karbid kremniya, Mir, M., 1972, 43 pp.

[15] Poling L., Obschaya khimiya, Mir, M., 1974, 846 pp.