Geodesic
Peculiarities of nanopoint damage process in the structure of por-SiC/Si, obtained by diffusion technology for chemical sensors
Vestnik Samarskogo universiteta. Estestvennonaučnaâ seriâ, no. 2 (2011), pp. 179-183 Cet article a éte moissonné depuis la source Math-Net.Ru

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Heteroepitaxy supported silicon carbide films as a perspective material for high-temperature electronics is considered. In the paper the analysis of the point damage process in homogeneous $\beta$-$SiC$ phase based on silicon matrix and gas phase hydrocarbons at 1360–1380$\,^\circ\!$C temperature range and dopant of Ga under normal pressure is given.
Keywords: nano point defect formation, solid-state chemical gas sensor, por-SiC/Si
Mots-clés : diffusion technology. 
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     title = {Peculiarities of nanopoint damage process in the structure of {por-SiC/Si,} obtained by diffusion technology for chemical sensors},
     journal = {Vestnik Samarskogo universiteta. Estestvennonau\v{c}na\^a seri\^a},
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V. I. Chepurnov; K. P. Sivakova; A. A. Ermoshkin. Peculiarities of nanopoint damage process in the structure of por-SiC/Si, obtained by diffusion technology for chemical sensors. Vestnik Samarskogo universiteta. Estestvennonaučnaâ seriâ, no. 2 (2011), pp. 179-183. http://geodesic.mathdoc.fr/item/VSGU_2011_2_a17/

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