@article{VNGU_2009_9_4_a0,
author = {A. M. Blokhin and S. A. Boyarskiy and B. V. Semisalov},
title = {On an {Approach} to the {Construction} of {Difference} {Schemes} for the {Momentum} {Equations} of {Charge} {Transport} in {Semiconductors}},
journal = {Sibirskij \v{z}urnal \v{c}istoj i prikladnoj matematiki},
pages = {3--15},
year = {2009},
volume = {9},
number = {4},
language = {ru},
url = {http://geodesic.mathdoc.fr/item/VNGU_2009_9_4_a0/}
}
TY - JOUR AU - A. M. Blokhin AU - S. A. Boyarskiy AU - B. V. Semisalov TI - On an Approach to the Construction of Difference Schemes for the Momentum Equations of Charge Transport in Semiconductors JO - Sibirskij žurnal čistoj i prikladnoj matematiki PY - 2009 SP - 3 EP - 15 VL - 9 IS - 4 UR - http://geodesic.mathdoc.fr/item/VNGU_2009_9_4_a0/ LA - ru ID - VNGU_2009_9_4_a0 ER -
%0 Journal Article %A A. M. Blokhin %A S. A. Boyarskiy %A B. V. Semisalov %T On an Approach to the Construction of Difference Schemes for the Momentum Equations of Charge Transport in Semiconductors %J Sibirskij žurnal čistoj i prikladnoj matematiki %D 2009 %P 3-15 %V 9 %N 4 %U http://geodesic.mathdoc.fr/item/VNGU_2009_9_4_a0/ %G ru %F VNGU_2009_9_4_a0
A. M. Blokhin; S. A. Boyarskiy; B. V. Semisalov. On an Approach to the Construction of Difference Schemes for the Momentum Equations of Charge Transport in Semiconductors. Sibirskij žurnal čistoj i prikladnoj matematiki, Tome 9 (2009) no. 4, pp. 3-15. http://geodesic.mathdoc.fr/item/VNGU_2009_9_4_a0/
[1] Blokhin A. M., Alaev R. D., Integraly energii i ikh prilozheniya k issledovaniyu ustoichivosti raznostnykh skhem, Novosibirsk, 1993 | MR
[2] Blokhin A. M., Sokovikov I. G., “Ob odnom podkhode k konstruirovaniyu raznostnykh skhem dlya kvazilineinykh uravnenii gazovoi dinamiki”, SMZh, 40:6 (1999), 1236–1243 | MR | Zbl
[3] Anile A. M., Romano V., “Non Parabolic Band Transport In Semiconductors: Closure of the Moment Equations”, Cont. Mech. Thermodyn., 11 (1999), 307–325 | DOI | MR | Zbl
[4] Romano V., “Non Parabolic Band Transport in Semiconductors: Closure of the Production Terms in the Moment Equations”, Cont. Mech. Thermodyn., 12 (2000), 31–51 | DOI | MR | Zbl
[5] Blokhin A. M., Bushmanov R. S., Rudometova A. S. et al., “Linear Asymptotic Stability of the Equilibrium State for the 2D MEP Hydrodynamical Model of Charge Transport in Semiconductors”, Nonlinear Analysis, 65 (2006), 1018–1038 | DOI | MR | Zbl
[6] Blokhin A. M., Bushmanov R. S., Romano V., “Nonlinear Asymptotic Stability of the Equilibrium State for the MEP Model of Charge Transport in Semiconductors”, Nonlinear Analysis, 65 (2006), 2169–2191 | DOI | MR | Zbl
[7] Blokhin A. M., Ibragimova A. S., Krasnikov N. Yu., “Ob odnom variante metoda pryamykh dlya uravneniya Puassona”, Vychislitelnye tekhnologii, 12:2 (2007), 33–42 | MR
[8] Blokhin A. M., Ibragimova A. S., Semisalov B. V., “Konstruirovanie vychislitelnogo algoritma dlya sistemy momentnykh uravnenii, opisyvayuschikh perenos zaryada v poluprovodnikakh”, Mat. modelirovanie, 24:4 (2009), 15–34
[9] Blokhin A. M., Ibragimova A. S., “Numerical Method for 2D Simulation of a Silicon MESFET with a Hydrodynamical Model Based on the Maximum Entropy Principle”, SIAM Journal on Scientific Computing, 31 (2009), 2015–2046 | DOI | MR | Zbl
[10] Romano V., “Nonparabolic Band Hydrodynamical Model of Silicon Semiconductors and Simulation of Electron Devices”, Math. Meth. Appl. Sci., 24 (2001), 439–471 | DOI | MR | Zbl
[11] Romano V., “2D Simulation of a Silicon MESFET with a Non-Parabolic Hydrodynamical Model Based on the Maximum Entropy Principle”, J. Comp. Phys., 176 (2002), 70–92 | DOI | Zbl