Geodesic
Supercomputer modeling of semiconductor quantum nanosystems
Numerical methods and programming, Tome 13 (2012) no. 1, pp. 253-262

Voir la notice de l'article provenant de la source Math-Net.Ru

Numerical research of electron transport and quantum effects in nanostructures often requires solving a number of large problems dependent on external parameters like temperature, magnetic field, chemical potential, or applied voltage. When a problem fits computing capability of a single node, these calculations are naturally parallel. Taking into account the realistic geometry of structures or electron-electron interaction allowed us to find new physical effects: redirection of the ballistic electron flow in the Y-branch, fluctuations of phase and temperature dependence of Aharonov–Bohm oscillations in the ring interferometer, 0.7-feature of conductance in the quantum point contact, formation of fractal terrases of voltage distribution, and point ohmic heating in disordered antidot lattice.
Keywords: numerical modeling; nanostructures; two-dimensional electron gas; Landauer formula; scattering; Schroedinger equation; Poisson equation. 
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     author = {O. A. Tkachenko and V. A. Tkachenko},
     title = {Supercomputer modeling of semiconductor quantum nanosystems},
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     pages = {253--262},
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     url = {http://geodesic.mathdoc.fr/item/VMP_2012_13_1_a26/}
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O. A. Tkachenko; V. A. Tkachenko. Supercomputer modeling of semiconductor quantum nanosystems. Numerical methods and programming, Tome 13 (2012) no. 1, pp. 253-262. http://geodesic.mathdoc.fr/item/VMP_2012_13_1_a26/