Geodesic
A special doping regime in silicon wafer nanocolumns
Numerical methods and programming, Tome 11 (2010) no. 3, pp. 210-214.

Voir la notice de l'article provenant de la source Math-Net.Ru

Computer simulation for the ion implantation of impurities into silicon plate surface nanocolumns is conducted when the ion stream line is parallel to the plate base.
Keywords: computer simulation; doping in silicon; implantation; donor and acceptor impurities. 
@article{VMP_2010_11_3_a0,
     author = {G. A. Tarnavskii},
     title = {A special doping regime in silicon wafer nanocolumns},
     journal = {Numerical methods and programming},
     pages = {210--214},
     publisher = {mathdoc},
     volume = {11},
     number = {3},
     year = {2010},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/VMP_2010_11_3_a0/}
}
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G. A. Tarnavskii. A special doping regime in silicon wafer nanocolumns. Numerical methods and programming, Tome 11 (2010) no. 3, pp. 210-214. http://geodesic.mathdoc.fr/item/VMP_2010_11_3_a0/