Geodesic
A mathematical simulation of implantation processes of doping donor and acceptor impurities in a silicon wafer
Numerical methods and programming, Tome 10 (2009) no. 3, pp. 363-370.

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A computational method for the mathematical simulation of one of the main technological processes in the nanostructured semiconductor material fabrication is briefly described. Some numerical results obtained with variation of constitutive parameters are analyzed. Several problems of mathematical simulation related to a size decrease of nanoelectromechanical systems are discussed.
Keywords: mathematical simulation; doping in silicon; implantation; donor and acceptor impurities. 
@article{VMP_2009_10_3_a10,
     author = {G. A. Tarnavskii},
     title = {A mathematical simulation of implantation processes of doping donor and acceptor impurities in a silicon wafer},
     journal = {Numerical methods and programming},
     pages = {363--370},
     publisher = {mathdoc},
     volume = {10},
     number = {3},
     year = {2009},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/VMP_2009_10_3_a10/}
}
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G. A. Tarnavskii. A mathematical simulation of implantation processes of doping donor and acceptor impurities in a silicon wafer. Numerical methods and programming, Tome 10 (2009) no. 3, pp. 363-370. http://geodesic.mathdoc.fr/item/VMP_2009_10_3_a10/