Geodesic
Numerical simulation for the problem of dynamics of oxide film growth in
Numerical methods and programming, Tome 2 (2001) no. 1, pp. 92-111.

Voir la notice de l'article provenant de la source Math-Net.Ru

An approximate simulation for the dynamics of oxide film growth in semiconductor substrates is developed. A generalization of the 1D Deal-Grove method to 2D problems is proposed on the basis of geometrical approach. Some numerical results are given for the following cases: 1) the growth of a subregion for SiO2 under oxidation in various mediums (O2 or H2O) and 2) the dynamics of oxide/material and oxide/oxidant boundaries in a wide range of constitutive parameters and nitride masks covering a part of the silicon surface.
Keywords: film growth, material oxidation, nitride masks, numerical simulation, semiconductors. 
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     author = {A. L. Alexandrov and G. A. Tarnavskii and S. I. Shpak and A. I. Gulidov and M. S. Obrecht},
     title = {Numerical simulation for the problem of dynamics of oxide film growth in},
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     pages = {92--111},
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     number = {1},
     year = {2001},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/VMP_2001_2_1_a6/}
}
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A. L. Alexandrov; G. A. Tarnavskii; S. I. Shpak; A. I. Gulidov; M. S. Obrecht. Numerical simulation for the problem of dynamics of oxide film growth in. Numerical methods and programming, Tome 2 (2001) no. 1, pp. 92-111. http://geodesic.mathdoc.fr/item/VMP_2001_2_1_a6/