Geodesic
Influence of photoexcitation conditions on the spin polarization of nitrogen-vacancy centers in isotopically enriched silicon carbide $6$H-$^{28}$SiC
Učënye zapiski Kazanskogo universiteta. Seriâ Fiziko-matematičeskie nauki, Uchenye Zapiski Kazanskogo Universiteta. Seriya Fiziko-Matematicheskie Nauki, Tome 166 (2024) no. 2, pp. 187-199

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Spin defects in semiconductors are attracting interest as a material basis for quantum information and computing technologies. In this work, the spin properties of negatively charged nitrogen-vacancy ($NV^{-}$) centers in a $6$H-SiC silicon carbide crystal enriched with the $^{28}$Si isotope were studied by high-frequency ($94$ GHz) electron paramagnetic resonance (EPR) methods. Due to an optical excitation channel at the $NV^{-}$ centers, it was possible to initialize the electron spin of the defect using a laser source, which led to a significant increase in the intensity of the recorded EPR signal. The dependences of the observed spin polarization were analyzed at different optical excitation wavelengths ($\lambda = 640$ – $1064$ nm), output power ($0$ – $500$ mW), and temperature ($50$ – $300$ K) of the crystal. The results obtained reveal the optimal experimental conditions for maximizing the efficiency of optical quantum energy transfer to the spin system. This opens up new possibilities for using $NV^{-}$ centers in $6$H-SiC to create multi-qubit spin-photon interfaces operating in the infrared region.
Keywords: spin-optical property, spin initialization, spin polarization, electron paramagnetic resonance, $NV^{-}$ center.
Mots-clés : silicon carbide 
@article{UZKU_2024_166_2_a4,
     author = {F. F. Murzakhanov and G. V. Mamin and M. A. Sadovnikova and D. V. Shurtakova and O. P. Kazarova and E. N. Mokhov and M. R. Gafurov},
     title = {Influence of photoexcitation conditions on the spin polarization of nitrogen-vacancy centers in isotopically enriched silicon carbide $6${H-}$^{28}${SiC}},
     journal = {U\v{c}\"enye zapiski Kazanskogo universiteta. Seri\^a Fiziko-matemati\v{c}eskie nauki},
     pages = {187--199},
     publisher = {mathdoc},
     volume = {166},
     number = {2},
     year = {2024},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/UZKU_2024_166_2_a4/}
}
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%A D. V. Shurtakova
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%A M. R. Gafurov
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F. F. Murzakhanov; G. V. Mamin; M. A. Sadovnikova; D. V. Shurtakova; O. P. Kazarova; E. N. Mokhov; M. R. Gafurov. Influence of photoexcitation conditions on the spin polarization of nitrogen-vacancy centers in isotopically enriched silicon carbide $6$H-$^{28}$SiC. Učënye zapiski Kazanskogo universiteta. Seriâ Fiziko-matematičeskie nauki, Uchenye Zapiski Kazanskogo Universiteta. Seriya Fiziko-Matematicheskie Nauki, Tome 166 (2024) no. 2, pp. 187-199. http://geodesic.mathdoc.fr/item/UZKU_2024_166_2_a4/