Geodesic
Hot-carrier thermalization and trap level population dynamics in a $\mathrm{CdS}$ crystal on a femtosecond time scale
Učënye zapiski Kazanskogo universiteta. Seriâ Fiziko-matematičeskie nauki, Uchenye Zapiski Kazanskogo Universiteta. Seriya Fiziko-Matematicheskie Nauki, Tome 155 (2013) no. 1, pp. 85-89 Cet article a éte moissonné depuis la source Math-Net.Ru

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We present the results obtained in the experimental studies of a semiconductor $\mathrm{CdS}$ crystal using a femtosecond spectroscopy technique. The trap level was found to be populated via the two-photon interband excitation process, and its relaxation lifetime was about 550 ps. The duration of ultrashort stimulated recombination emission was directly measured and found to be less than 400 fs. The estimated carrier-phonon interaction time was of 20 fs order.
Keywords: femtosecond spectroscopy, cadmium sulfide, trap level, two-photon excitation, thermalization. 
@article{UZKU_2013_155_1_a11,
     author = {A. V. Leontiev and K. V. Ivanin and V. S. Lobkov and V. V. Samartsev and G. M. Safiullin},
     title = {Hot-carrier thermalization and trap level population dynamics in a~$\mathrm{CdS}$ crystal on a~femtosecond time scale},
     journal = {U\v{c}\"enye zapiski Kazanskogo universiteta. Seri\^a Fiziko-matemati\v{c}eskie nauki},
     pages = {85--89},
     year = {2013},
     volume = {155},
     number = {1},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/UZKU_2013_155_1_a11/}
}
TY  - JOUR
AU  - A. V. Leontiev
AU  - K. V. Ivanin
AU  - V. S. Lobkov
AU  - V. V. Samartsev
AU  - G. M. Safiullin
TI  - Hot-carrier thermalization and trap level population dynamics in a $\mathrm{CdS}$ crystal on a femtosecond time scale
JO  - Učënye zapiski Kazanskogo universiteta. Seriâ Fiziko-matematičeskie nauki
PY  - 2013
SP  - 85
EP  - 89
VL  - 155
IS  - 1
UR  - http://geodesic.mathdoc.fr/item/UZKU_2013_155_1_a11/
LA  - ru
ID  - UZKU_2013_155_1_a11
ER  - 
%0 Journal Article
%A A. V. Leontiev
%A K. V. Ivanin
%A V. S. Lobkov
%A V. V. Samartsev
%A G. M. Safiullin
%T Hot-carrier thermalization and trap level population dynamics in a $\mathrm{CdS}$ crystal on a femtosecond time scale
%J Učënye zapiski Kazanskogo universiteta. Seriâ Fiziko-matematičeskie nauki
%D 2013
%P 85-89
%V 155
%N 1
%U http://geodesic.mathdoc.fr/item/UZKU_2013_155_1_a11/
%G ru
%F UZKU_2013_155_1_a11
A. V. Leontiev; K. V. Ivanin; V. S. Lobkov; V. V. Samartsev; G. M. Safiullin. Hot-carrier thermalization and trap level population dynamics in a $\mathrm{CdS}$ crystal on a femtosecond time scale. Učënye zapiski Kazanskogo universiteta. Seriâ Fiziko-matematičeskie nauki, Uchenye Zapiski Kazanskogo Universiteta. Seriya Fiziko-Matematicheskie Nauki, Tome 155 (2013) no. 1, pp. 85-89. http://geodesic.mathdoc.fr/item/UZKU_2013_155_1_a11/

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