Geodesic
Transport properties of semiconductor double quantum dots
Učënye zapiski Kazanskogo universiteta. Seriâ Fiziko-matematičeskie nauki, Uchenye Zapiski Kazanskogo Universiteta. Seriya Fiziko-Matematicheskie Nauki, Tome 152 (2010) no. 4, pp. 7-20

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The results of energy spectrum investigations in GaAs vertical double quantum dot are presented. Specific feature of the investigated sample was a rather low value of the potential barriers between dots and leads, which caused strong tunneling coupling, increased overlapping of wave functions and low resistance. As the result it is expected that quantum transport through this double quantum dot should demonstrate some peculiarities.
Keywords: double quantum dot, quantum transport, Coulomb blockade, low temperatures. 
@article{UZKU_2010_152_4_a0,
     author = {A. O. Badrutdinov and Sh. M. Huang and K. Ono and K. Kono and D. A. Tayurskii},
     title = {Transport properties of semiconductor double quantum dots},
     journal = {U\v{c}\"enye zapiski Kazanskogo universiteta. Seri\^a Fiziko-matemati\v{c}eskie nauki},
     pages = {7--20},
     publisher = {mathdoc},
     volume = {152},
     number = {4},
     year = {2010},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/UZKU_2010_152_4_a0/}
}
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A. O. Badrutdinov; Sh. M. Huang; K. Ono; K. Kono; D. A. Tayurskii. Transport properties of semiconductor double quantum dots. Učënye zapiski Kazanskogo universiteta. Seriâ Fiziko-matematičeskie nauki, Uchenye Zapiski Kazanskogo Universiteta. Seriya Fiziko-Matematicheskie Nauki, Tome 152 (2010) no. 4, pp. 7-20. http://geodesic.mathdoc.fr/item/UZKU_2010_152_4_a0/