Geodesic
Investigation of heating and recrystallization of implanted silicon under pulse light irradiation
Učënye zapiski Kazanskogo universiteta. Seriâ Fiziko-matematičeskie nauki, Uchenye Zapiski Kazanskogo Universiteta. Seriya Fiziko-Matematicheskie Nauki, Tome 152 (2010) no. 3, pp. 164-170 Cet article a éte moissonné depuis la source Math-Net.Ru

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A noncontact method was suggested and applied to investigate the heating dynamics and solid-phase recrystallization of implanted semiconductors during pulsed light annealing. This method is based on the recording of optical diffraction signals from special periodic structures prepared in advance. The method makes it possible to record the temperature and duration of solid-phase recrystallization with high time resolution, as well as to determine the incipient melting time of the ion-implanted semiconductor layer.
Keywords: silicon, pulsed light annealing, recrystallization, Fraunhofer diffraction, thermal expansion of solids.
Mots-clés : ion implantation 
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     title = {Investigation of heating and recrystallization of implanted silicon under pulse light irradiation},
     journal = {U\v{c}\"enye zapiski Kazanskogo universiteta. Seri\^a Fiziko-matemati\v{c}eskie nauki},
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B. F. Farrakhov; M. F. Galyautdinov; Ya. V. Fattakhov; M. V. Zakharov. Investigation of heating and recrystallization of implanted silicon under pulse light irradiation. Učënye zapiski Kazanskogo universiteta. Seriâ Fiziko-matematičeskie nauki, Uchenye Zapiski Kazanskogo Universiteta. Seriya Fiziko-Matematicheskie Nauki, Tome 152 (2010) no. 3, pp. 164-170. http://geodesic.mathdoc.fr/item/UZKU_2010_152_3_a23/

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