Geodesic
Plasmonic mode confinement in InAs-SiO$_2$-Si waveguide in Terahertz region
Proceedings of the Yerevan State University. Physical and mathematical sciences, no. 3 (2011), pp. 58-61

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The dispersion relation of a novel semiconductor-gap-dielectric waveguide in terahertz range are investigated. It is shown that InAs-SiO$_2$-Si structure supports strongly confined guided mode with а sizes $0.0016 \lambda\times 0.02\lambda$ at $1$ THz.
Keywords: waveguides
Mots-clés : terahertz, surface plasmons. 
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     author = {H. S. Hakobyan},
     title = {Plasmonic mode confinement in {InAs-SiO}$_2${-Si} waveguide in {Terahertz} region},
     journal = {Proceedings of the Yerevan State University. Physical and mathematical sciences},
     pages = {58--61},
     publisher = {mathdoc},
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H. S. Hakobyan. Plasmonic mode confinement in InAs-SiO$_2$-Si waveguide in Terahertz region. Proceedings of the Yerevan State University. Physical and mathematical sciences, no. 3 (2011), pp. 58-61. http://geodesic.mathdoc.fr/item/UZERU_2011_3_a8/