Geodesic
Saturation effects of laser radiation nonlinearity in semiconductors
Proceedings of the Yerevan State University. Physical and mathematical sciences, no. 2 (1991), pp. 79-85

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The self-action effects of laser radiation in semiconductor media are considered in the paper. It is shown, that the nonlinearity saturation due to variation in free excess carrier concentration results in specific waveguide condition. The fundamental self-action parameters are calculated in the presence of linear absorption (gain). In particular, in real conditions for $A_3B_5$ semiconductors at the lengths of some $mm$ 20-times constriction is possible. 
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     title = {Saturation effects of laser radiation nonlinearity in semiconductors},
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A. M. Khachatryan; A. J. Kroyan. Saturation effects of laser radiation nonlinearity in semiconductors. Proceedings of the Yerevan State University. Physical and mathematical sciences, no. 2 (1991), pp. 79-85. http://geodesic.mathdoc.fr/item/UZERU_1991_2_a10/