Geodesic
Photosensitive silicon structures doped with Se
Proceedings of the Yerevan State University. Physical and mathematical sciences, no. 1 (1989), pp. 56-61.

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The photoelectric properties of $p^+-n-n^+$ silicon structures doped with Selen have been investigated. The influence of impurity absorption range illumination on current voltage and spectral characteristics of the devices have been considered. 
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V. M. Arutyunyan; R. S. Barscghian; G. E. Grigorian; V. Sh. Zargarian; V. A. Mkhikian; B. O. Semerdjian. Photosensitive silicon structures doped with Se. Proceedings of the Yerevan State University. Physical and mathematical sciences, no. 1 (1989), pp. 56-61. http://geodesic.mathdoc.fr/item/UZERU_1989_1_a8/

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