Geodesic
Photosensitive silicon structures doped with Se
Proceedings of the Yerevan State University. Physical and mathematical sciences, no. 1 (1989), pp. 56-61

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The photoelectric properties of $p^+-n-n^+$ silicon structures doped with Selen have been investigated. The influence of impurity absorption range illumination on current voltage and spectral characteristics of the devices have been considered. 
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     author = {V. M. Arutyunyan and R. S. Barscghian and G. E. Grigorian and V. Sh. Zargarian and V. A. Mkhikian and B. O. Semerdjian},
     title = {Photosensitive silicon structures doped with {Se}},
     journal = {Proceedings of the Yerevan State University. Physical and mathematical sciences},
     pages = {56--61},
     publisher = {mathdoc},
     number = {1},
     year = {1989},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/UZERU_1989_1_a8/}
}
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V. M. Arutyunyan; R. S. Barscghian; G. E. Grigorian; V. Sh. Zargarian; V. A. Mkhikian; B. O. Semerdjian. Photosensitive silicon structures doped with Se. Proceedings of the Yerevan State University. Physical and mathematical sciences, no. 1 (1989), pp. 56-61. http://geodesic.mathdoc.fr/item/UZERU_1989_1_a8/