Geodesic
High frequency limit of MOM diodes
Proceedings of the Yerevan State University. Physical and mathematical sciences, no. 3 (1988), pp. 83-86

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In the present paper the MOM diode behaviour has been investigated for frequencies much higher than electron collision characterizing frequency in whisker. It has been shown that the reactive part of the whisker impedance is of inductive character, the influence of that inductivity and tunnelling transition shunting capacitance on the properties of MOM diode has been investigated. 
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     author = {Yu. A. Avetisyan and H. H. Barseghian and A. O. Makaryan},
     title = {High frequency limit of {MOM} diodes},
     journal = {Proceedings of the Yerevan State University. Physical and mathematical sciences},
     pages = {83--86},
     publisher = {mathdoc},
     number = {3},
     year = {1988},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/UZERU_1988_3_a10/}
}
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Yu. A. Avetisyan; H. H. Barseghian; A. O. Makaryan. High frequency limit of MOM diodes. Proceedings of the Yerevan State University. Physical and mathematical sciences, no. 3 (1988), pp. 83-86. http://geodesic.mathdoc.fr/item/UZERU_1988_3_a10/