Geodesic
The possible model of the “longtime traps” of the current carriers in semiconductors II. The baste level
Proceedings of the Yerevan State University. Physical and mathematical sciences, no. 2 (1986), pp. 65-68 Cet article a éte moissonné depuis la source Math-Net.Ru

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     author = {S. V. Izmailov and Ts. A. Minassian},
     title = {The possible model of the {\textquotedblleft}longtime traps{\textquotedblright} of the current carriers in semiconductors {II.} {The} baste level},
     journal = {Proceedings of the Yerevan State University. Physical and mathematical sciences},
     pages = {65--68},
     year = {1986},
     number = {2},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/UZERU_1986_2_a9/}
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S. V. Izmailov; Ts. A. Minassian. The possible model of the “longtime traps” of the current carriers in semiconductors II. The baste level. Proceedings of the Yerevan State University. Physical and mathematical sciences, no. 2 (1986), pp. 65-68. http://geodesic.mathdoc.fr/item/UZERU_1986_2_a9/

[1] S. V. Izmailov, Ts. A. Minasyan, “Vozmozhnaya model "dolgikh lovushek” nositelei v poluprovodnikakh”, Uch. zap. EGU, 1978, no. 3

[2] M. I. Korsunskii, Anomalnaya fotoprovodimost, Nauka, Moskva, 1972

[3] L. V. Kantorovich, V. I. Krylov, Priblizhennye metody vysshego analiza, 5-e izd., GIFML, M.–L., 1962 | MR | Zbl