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@article{UZERU_1986_2_a9,
author = {S. V. Izmailov and Ts. A. Minassian},
title = {The possible model of the ``longtime traps{\textquotedblright} of the current carriers in semiconductors {II.} {The} baste level},
journal = {Proceedings of the Yerevan State University. Physical and mathematical sciences},
pages = {65--68},
publisher = {mathdoc},
number = {2},
year = {1986},
language = {ru},
url = {http://geodesic.mathdoc.fr/item/UZERU_1986_2_a9/}
}
TY - JOUR AU - S. V. Izmailov AU - Ts. A. Minassian TI - The possible model of the ``longtime traps” of the current carriers in semiconductors II. The baste level JO - Proceedings of the Yerevan State University. Physical and mathematical sciences PY - 1986 SP - 65 EP - 68 IS - 2 PB - mathdoc UR - http://geodesic.mathdoc.fr/item/UZERU_1986_2_a9/ LA - ru ID - UZERU_1986_2_a9 ER -
%0 Journal Article %A S. V. Izmailov %A Ts. A. Minassian %T The possible model of the ``longtime traps” of the current carriers in semiconductors II. The baste level %J Proceedings of the Yerevan State University. Physical and mathematical sciences %D 1986 %P 65-68 %N 2 %I mathdoc %U http://geodesic.mathdoc.fr/item/UZERU_1986_2_a9/ %G ru %F UZERU_1986_2_a9
S. V. Izmailov; Ts. A. Minassian. The possible model of the ``longtime traps” of the current carriers in semiconductors II. The baste level. Proceedings of the Yerevan State University. Physical and mathematical sciences, no. 2 (1986), pp. 65-68. http://geodesic.mathdoc.fr/item/UZERU_1986_2_a9/
[1] S. V. Izmailov, Ts. A. Minasyan, “Vozmozhnaya model "dolgikh lovushek” nositelei v poluprovodnikakh”, Uch. zap. EGU, 1978, no. 3
[2] M. I. Korsunskii, Anomalnaya fotoprovodimost, Nauka, Moskva, 1972
[3] L. V. Kantorovich, V. I. Krylov, Priblizhennye metody vysshego analiza, 5-e izd., GIFML, M.–L., 1962 | MR | Zbl