Geodesic
Inhomogeneities in compensated silicon by laser scanning method
Proceedings of the Yerevan State University. Physical and mathematical sciences, no. 1 (1986), pp. 87-90.

Voir la notice de l'article provenant de la source Math-Net.Ru

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V. M. Arutyunyan; R. S. Barscghian; M. A. Gukasyan. Inhomogeneities in compensated silicon by laser scanning method. Proceedings of the Yerevan State University. Physical and mathematical sciences, no. 1 (1986), pp. 87-90. http://geodesic.mathdoc.fr/item/UZERU_1986_1_a12/

[1] by М. К. Шейнкман, А. Я. Шик “Dolgovremennye relaksatsii i ostatochnaya provodimost v poluprovodnikakh”, FTP, 10 (1976), 209

[2] by М. К. Бахадырханов, С. С. Нигманходжаев “Otritsatelnaya fotoprovodimost v kremnii, legirovannom margantsem”, FTP, 12:7 (1976)

[3] Otchet problemnoi laboratorii fiziki poluprovodnikovykh materialov i priborov EGU za 1983 g. Inv. # 0071171, 1983

[4] by В. М. Арутюнян, В. Ш. Марукян, Ж. Р. Паносян, Ф. Г. Бадалян “Fotochuvstvitelnye oblasti v baze S-fotopriemnika”, FTP, 6:5 (1982)