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@article{UZERU_1985_2_a11, author = {A. I. Vahanyan and M. L. Dimacsyan and E. M. Bagiyan}, title = {Determination of some parameters of band structure of two-valley {In}$_{1-x}${Ga}$_x${P} alloys}, journal = {Proceedings of the Yerevan State University. Physical and mathematical sciences}, pages = {69--73}, publisher = {mathdoc}, number = {2}, year = {1985}, language = {ru}, url = {http://geodesic.mathdoc.fr/item/UZERU_1985_2_a11/} }
TY - JOUR AU - A. I. Vahanyan AU - M. L. Dimacsyan AU - E. M. Bagiyan TI - Determination of some parameters of band structure of two-valley In$_{1-x}$Ga$_x$P alloys JO - Proceedings of the Yerevan State University. Physical and mathematical sciences PY - 1985 SP - 69 EP - 73 IS - 2 PB - mathdoc UR - http://geodesic.mathdoc.fr/item/UZERU_1985_2_a11/ LA - ru ID - UZERU_1985_2_a11 ER -
%0 Journal Article %A A. I. Vahanyan %A M. L. Dimacsyan %A E. M. Bagiyan %T Determination of some parameters of band structure of two-valley In$_{1-x}$Ga$_x$P alloys %J Proceedings of the Yerevan State University. Physical and mathematical sciences %D 1985 %P 69-73 %N 2 %I mathdoc %U http://geodesic.mathdoc.fr/item/UZERU_1985_2_a11/ %G ru %F UZERU_1985_2_a11
A. I. Vahanyan; M. L. Dimacsyan; E. M. Bagiyan. Determination of some parameters of band structure of two-valley In$_{1-x}$Ga$_x$P alloys. Proceedings of the Yerevan State University. Physical and mathematical sciences, no. 2 (1985), pp. 69-73. http://geodesic.mathdoc.fr/item/UZERU_1985_2_a11/
[1] A. I. Vaganyan, “Ob opredelenii nekotorykh parametrov mnogodolinnykh poluprovodnikov na osnove temperaturnoi zavisimosti kontsentratsii nositelei toka”, Uch. zap. EGU, 1978, no. 2, 64–69
[2] A. I. Vaganyan, “Opredelenie nekotorykh parametrov zonnoi struktury mnogodolinnykh poluprovodnikov”, FTP, 16:3 (1982), 520–523
[3] G. M. Avakyants, A. I. Vaganyan, M. L. Dimaksyan, “O mekhanizmakh rasseyaniya elektronov v tverdykh rastvorakh In$_{1-x}$Ga$_x$P”, Izv. AN Arm. SSR, Fizika, 3:2 (1978), 118–126
[4] R. S. Sharma, G. S. Verma, “Hall Coefficient, Mobiliti and Resistivity of Tc-doped GaSb samples”, Phys. Rev. B, 5:4 (1972), 1535 | DOI
[5] M. L. Cohen, T. K. Bergstresser, “Band Structures and Pseudopotential Form Factors for Fourteen Semiconductors of the Dlamont and Zinc-Blende Structures”, Phys. Rev., 141:2 (1966), 789—796 | DOI
[6] P. Merier, D. Auvergne, “Conduction Band Structure of GaInP”, Phys. Rev. B, 15:4 (1977), 2032–2047 | DOI
[7] Yu. E. Maronchuk, H. A. Yakusheva, “Elektricheskie svoistva tverdykh rastvorov Al$_x$Ga$_{1-x}$As, legirovannykh tellurom”, FTP, 10:7 (1976), 1349–1354
[8] Zh. I. Alferov, D. 3. Garbuzov, S. G. Konnikov, P. S. Koneev, V. A. Mishurnyi, V. D. Rumyantsev, D. N. Tretyakov, “Fotolyuminestsentsiya epitaksialnykh sloev tverdykh rastvorov In$_{1-x}$Ga$_x$P v diapazone sostavov 0,3$kh$1”, FTP, 7:36 (1973), 624–627