Geodesic
Thin-film capacitor based on barium titanate formed by the sol-gel method on titanium
Problemy fiziki, matematiki i tehniki, no. 3 (2024), pp. 7-12.

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A laboratory thin-film capacitor was manufactured based on a multilayer sol-gel film of barium titanate using a titanium substrate. The results of measuring the capacitance and dielectric loss tangent of the formed capacitor in the frequency range 0.2 kHz – 200 kHz are presented. It has been established that when moving from the low-frequency range to the high-frequency one, the value of the dielectric loss tangent decreases by an order of magnitude and amounts to 0.032–0.039 for the frequency range from 50 kHz to 200 kHz. For the entire range under study, the capacitance value of the capacitor is 560–750 pF and the specific capacitance is 41–55 nF/cm$^2$. For the frequency range 1 kHz – 10 kHz, the dielectric constant of barium titanate is calculated to be from 108 to 127.
Mots-clés : BaTiO$_3$, dielectric loss tangent.
Keywords: sol-gel method, film capacitor capacitance 
@article{PFMT_2024_3_a0,
     author = {N. V. Gaponenko and R. T. Makhmutov and E. I. Lashkovskaya and E. V. Telesh and K. V. Shustsikava and V. A. Kovalev and Yu. V. Radyush and D. V. Zhigulin and V. A. Pilipenko and A. V. Semchenko},
     title = {Thin-film capacitor based on barium titanate formed by the sol-gel method on titanium},
     journal = {Problemy fiziki, matematiki i tehniki},
     pages = {7--12},
     publisher = {mathdoc},
     number = {3},
     year = {2024},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/PFMT_2024_3_a0/}
}
TY  - JOUR
AU  - N. V. Gaponenko
AU  - R. T. Makhmutov
AU  - E. I. Lashkovskaya
AU  - E. V. Telesh
AU  - K. V. Shustsikava
AU  - V. A. Kovalev
AU  - Yu. V. Radyush
AU  - D. V. Zhigulin
AU  - V. A. Pilipenko
AU  - A. V. Semchenko
TI  - Thin-film capacitor based on barium titanate formed by the sol-gel method on titanium
JO  - Problemy fiziki, matematiki i tehniki
PY  - 2024
SP  - 7
EP  - 12
IS  - 3
PB  - mathdoc
UR  - http://geodesic.mathdoc.fr/item/PFMT_2024_3_a0/
LA  - ru
ID  - PFMT_2024_3_a0
ER  - 
%0 Journal Article
%A N. V. Gaponenko
%A R. T. Makhmutov
%A E. I. Lashkovskaya
%A E. V. Telesh
%A K. V. Shustsikava
%A V. A. Kovalev
%A Yu. V. Radyush
%A D. V. Zhigulin
%A V. A. Pilipenko
%A A. V. Semchenko
%T Thin-film capacitor based on barium titanate formed by the sol-gel method on titanium
%J Problemy fiziki, matematiki i tehniki
%D 2024
%P 7-12
%N 3
%I mathdoc
%U http://geodesic.mathdoc.fr/item/PFMT_2024_3_a0/
%G ru
%F PFMT_2024_3_a0
N. V. Gaponenko; R. T. Makhmutov; E. I. Lashkovskaya; E. V. Telesh; K. V. Shustsikava; V. A. Kovalev; Yu. V. Radyush; D. V. Zhigulin; V. A. Pilipenko; A. V. Semchenko. Thin-film capacitor based on barium titanate formed by the sol-gel method on titanium. Problemy fiziki, matematiki i tehniki, no. 3 (2024), pp. 7-12. http://geodesic.mathdoc.fr/item/PFMT_2024_3_a0/

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