Modeling of ir radiation influence on the phase composition of silicon dioxide coatings
Problemy fiziki, matematiki i tehniki, no. 3 (2023), pp. 64-68

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Mathematical modeling of the interaction of radiation in the near infrared range with a coating of silicon dioxide was carried out at a pulse duration $\tau = 0,05$$0,5$ seconds and exposure $E = 0,1$ to $1,0$ J/cm$^2$. An estimate is made of the decrease in the rate of plasma-chemical etching of a SiO$_2$ coating due to an increase in the average binding energy in the crystal lattice due to thermal modification of the phase composition of the specified coating.
Keywords: plasma-chemical etching, silicon dioxide, infrared radiation, mathematical modeling.
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     author = {A. N. Kupo and V. V. Emelyanov and V. A. Emelyanov},
     title = {Modeling of ir radiation influence on the phase composition of silicon dioxide coatings},
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     pages = {64--68},
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     url = {http://geodesic.mathdoc.fr/item/PFMT_2023_3_a11/}
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A. N. Kupo; V. V. Emelyanov; V. A. Emelyanov. Modeling of ir radiation influence on the phase composition of silicon dioxide coatings. Problemy fiziki, matematiki i tehniki, no. 3 (2023), pp. 64-68. http://geodesic.mathdoc.fr/item/PFMT_2023_3_a11/