Geodesic
Modeling of plasma-chemical etching of silicon nitride functional layer on silicon dioxide sublayer in microelectronics technologies
Problemy fiziki, matematiki i tehniki, no. 3 (2023), pp. 60-63

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Mathematical modeling of plasma-chemical etching of a silicon nitride film in the plasma of a gas mixture containing sulfur hexafluoride as a fluorine-containing gas in an amount of $70$–$91$ vol. $\%$ and oxygen in the amount of $30$–$9$ vol. $\%$, at plasma power density $I = 0,2$–$0,4$ W/cm$^2$ and operating pressure $P = 4$–$8$ Pa.
Keywords: plasma-chemical etching, mathematical modeling.
Mots-clés : silicon nitride 
@article{PFMT_2023_3_a10,
     author = {V. V. Emelyanov and A. N. Kupo and V. A. Emelyanov},
     title = {Modeling of plasma-chemical etching of silicon nitride functional layer on silicon dioxide sublayer in microelectronics technologies},
     journal = {Problemy fiziki, matematiki i tehniki},
     pages = {60--63},
     publisher = {mathdoc},
     number = {3},
     year = {2023},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/PFMT_2023_3_a10/}
}
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V. V. Emelyanov; A. N. Kupo; V. A. Emelyanov. Modeling of plasma-chemical etching of silicon nitride functional layer on silicon dioxide sublayer in microelectronics technologies. Problemy fiziki, matematiki i tehniki, no. 3 (2023), pp. 60-63. http://geodesic.mathdoc.fr/item/PFMT_2023_3_a10/