Geodesic
Modeling of plasma-chemical etching of silicon nitride functional layer on silicon dioxide sublayer in microelectronics technologies
Problemy fiziki, matematiki i tehniki, no. 3 (2023), pp. 60-63 Cet article a éte moissonné depuis la source Math-Net.Ru

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Mathematical modeling of plasma-chemical etching of a silicon nitride film in the plasma of a gas mixture containing sulfur hexafluoride as a fluorine-containing gas in an amount of $70$–$91$ vol. $\%$ and oxygen in the amount of $30$–$9$ vol. $\%$, at plasma power density $I = 0,2$–$0,4$ W/cm$^2$ and operating pressure $P = 4$–$8$ Pa.
Keywords: plasma-chemical etching, mathematical modeling.
Mots-clés : silicon nitride 
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V. V. Emelyanov; A. N. Kupo; V. A. Emelyanov. Modeling of plasma-chemical etching of silicon nitride functional layer on silicon dioxide sublayer in microelectronics technologies. Problemy fiziki, matematiki i tehniki, no. 3 (2023), pp. 60-63. http://geodesic.mathdoc.fr/item/PFMT_2023_3_a10/

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