Geodesic
Ferroelectric properties of strontium-bismuth tantalate thin film deposited by RF magnetron sputtering method
Problemy fiziki, matematiki i tehniki, no. 1 (2018), pp. 33-37.

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Characteristics of ferroelectric thin films of strontium-bismuth tantalate (SBT), which were deposited by means of HF magnetron sputtering on Pt/TiO$_2$/SiO$_2$/Si substrates, are investigated. The dependences of permittivity, residual polarization, and coercitivity of SBT films on the modes of subsequent annealing are established. Films with the residual polarization of $2P_r = 3.02$ $\mu$C/cm$^2$ and coercitivity of $2E_c = 140$ kV/cm are obtained at the annealing temperature of $800^\circ$ C. The dielectric constant and loss tangent at the frequency of $1.0$ MHz were accordingly equal to $\varepsilon = 125$ and $\mathrm{tg}\,\delta = 0.067$. The Curie temperature of the films reached $310$–$315^\circ$ C.
Keywords: non-volatile memory, FeRAM, strontium-bismuth tantalate, SBT, HF magnetron sputtering.
Mots-clés : ferroelectric 
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     title = {Ferroelectric properties of strontium-bismuth tantalate thin film deposited by {RF} magnetron sputtering method},
     journal = {Problemy fiziki, matematiki i tehniki},
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J. E. Okojie; D. A. Golosov; S. N. Melnikov; S. M. Zavadski; V. V. Kolos; E. A. Poplevka; Yu. A. Zhukovich. Ferroelectric properties of strontium-bismuth tantalate thin film deposited by RF magnetron sputtering method. Problemy fiziki, matematiki i tehniki, no. 1 (2018), pp. 33-37. http://geodesic.mathdoc.fr/item/PFMT_2018_1_a4/

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