Geodesic
Process research of laser splitting silicon wafers cutout in the plane (110)
Problemy fiziki, matematiki i tehniki, no. 3 (2012), pp. 37-40

Voir la notice de l'article provenant de la source Math-Net.Ru

Results of laser thermosplitting process modelling of single-crystalline silicon are presented. Calculation of the thermoelastic fields formed in a silicon plate as a result of consecutive laser heating and coolant influence was carried out for a section (110) in three different variants of laser beam movement, namely in directions [1–10], [001], [1–11].
Keywords: crack, laser splitting, silicon wafer. 
@article{PFMT_2012_3_a6,
     author = {A. N. Serdyukov and S. V. Shalupaev and Yu. V. Nikitjuk and A. A. Sereda},
     title = {Process research of laser splitting silicon wafers cutout in the plane (110)},
     journal = {Problemy fiziki, matematiki i tehniki},
     pages = {37--40},
     publisher = {mathdoc},
     number = {3},
     year = {2012},
     language = {ru},
     url = {http://geodesic.mathdoc.fr/item/PFMT_2012_3_a6/}
}
TY  - JOUR
AU  - A. N. Serdyukov
AU  - S. V. Shalupaev
AU  - Yu. V. Nikitjuk
AU  - A. A. Sereda
TI  - Process research of laser splitting silicon wafers cutout in the plane (110)
JO  - Problemy fiziki, matematiki i tehniki
PY  - 2012
SP  - 37
EP  - 40
IS  - 3
PB  - mathdoc
UR  - http://geodesic.mathdoc.fr/item/PFMT_2012_3_a6/
LA  - ru
ID  - PFMT_2012_3_a6
ER  - 
%0 Journal Article
%A A. N. Serdyukov
%A S. V. Shalupaev
%A Yu. V. Nikitjuk
%A A. A. Sereda
%T Process research of laser splitting silicon wafers cutout in the plane (110)
%J Problemy fiziki, matematiki i tehniki
%D 2012
%P 37-40
%N 3
%I mathdoc
%U http://geodesic.mathdoc.fr/item/PFMT_2012_3_a6/
%G ru
%F PFMT_2012_3_a6
A. N. Serdyukov; S. V. Shalupaev; Yu. V. Nikitjuk; A. A. Sereda. Process research of laser splitting silicon wafers cutout in the plane (110). Problemy fiziki, matematiki i tehniki, no. 3 (2012), pp. 37-40. http://geodesic.mathdoc.fr/item/PFMT_2012_3_a6/