Geodesic
Process research of laser splitting silicon wafers cutout in the plane (110)
Problemy fiziki, matematiki i tehniki, no. 3 (2012), pp. 37-40.

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Results of laser thermosplitting process modelling of single-crystalline silicon are presented. Calculation of the thermoelastic fields formed in a silicon plate as a result of consecutive laser heating and coolant influence was carried out for a section (110) in three different variants of laser beam movement, namely in directions [1–10], [001], [1–11].
Keywords: crack, laser splitting, silicon wafer. 
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A. N. Serdyukov; S. V. Shalupaev; Yu. V. Nikitjuk; A. A. Sereda. Process research of laser splitting silicon wafers cutout in the plane (110). Problemy fiziki, matematiki i tehniki, no. 3 (2012), pp. 37-40. http://geodesic.mathdoc.fr/item/PFMT_2012_3_a6/

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