Study of the preparation CuO and boron films
Problemy fiziki, matematiki i tehniki, no. 2 (2010), pp. 80-82

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The use of ion beam source sputtering, CuO and B films were deposited successively. The deposition speeds are 11 nm/min and 11.8 nm/min, respectively. The purity and morphology of the as-prepared films were investigated by power X-ray diffraction and atomic force microscopy. Thus it is can be seen that the sizes of the films were more homogeneous in B than CuO.
Keywords: atomic force microscopy, ion beam source sputtering, hot isostatic pressing
Mots-clés : boron, X-ray diffraction.
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     author = {Zhu Peng and N. N. Fedosenko and D. G. Piliptsov and R. V. Bekarevich},
     title = {Study of the preparation {CuO} and boron films},
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     pages = {80--82},
     publisher = {mathdoc},
     number = {2},
     year = {2010},
     language = {en},
     url = {http://geodesic.mathdoc.fr/item/PFMT_2010_2_a11/}
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Zhu Peng; N. N. Fedosenko; D. G. Piliptsov; R. V. Bekarevich. Study of the preparation CuO and boron films. Problemy fiziki, matematiki i tehniki, no. 2 (2010), pp. 80-82. http://geodesic.mathdoc.fr/item/PFMT_2010_2_a11/