Geodesic
Tunneling recombination in GaN/InGaN LEDs with a single quantum well
Nanosistemy: fizika, himiâ, matematika, Tome 15 (2024) no. 2, pp. 204-214.

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The paper proposes an analytical model of tunneling-recombination processes with forward and reverse displacements in InGaN/GaN-based structures containing a quantum well, assuming that the processes of generation and recombination are complex, while one of the stages of the transition of the charge carrier to the center is tunneling. Comparing the model with the experiment allowed us to determine the energies of the recombination centers of 0.22 and 0.45 eV. These energies may correspond to centers formed by defect complexes along filamentous dislocations, such as divacansions $(V_{Ga} V_N)$, and a point isolated defect observed in n-type GaN layers grown by various methods, respectively.
Keywords: quantum well, nanoscale heterostructures, tunneling recombination, current transfer, nonradiative recombination levels. 
@article{NANO_2024_15_2_a6,
     author = {Sergey V. Bulyarskii and Liubov N. Vostretsova and Valeriya A. Ribenek},
     title = {Tunneling recombination in {GaN/InGaN} {LEDs} with a single quantum well},
     journal = {Nanosistemy: fizika, himi\^a, matematika},
     pages = {204--214},
     publisher = {mathdoc},
     volume = {15},
     number = {2},
     year = {2024},
     language = {en},
     url = {http://geodesic.mathdoc.fr/item/NANO_2024_15_2_a6/}
}
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Sergey V. Bulyarskii; Liubov N. Vostretsova; Valeriya A. Ribenek. Tunneling recombination in GaN/InGaN LEDs with a single quantum well. Nanosistemy: fizika, himiâ, matematika, Tome 15 (2024) no. 2, pp. 204-214. http://geodesic.mathdoc.fr/item/NANO_2024_15_2_a6/