Surface topology, electrophysical properties and formation mechanism of tin(ii) sulfide thin films
Nanosistemy: fizika, himiâ, matematika, Tome 14 (2023) no. 6, pp. 699-704.

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Photosensitive nanocrystalline SnS films with a size of coherent X-ray scattering regions of about 30 nm were obtained by chemical bath deposition. It has been demonstrated that the deposition time affects significantly both microstructure and thickness of the film as well as the size of the particles' agglomerates forming the film. The current sensitivity of the obtained films was studied. All synthesized films, regardless of the duration of synthesis, reveal $p$-type conductivity due to Sn vacancies. Atomic force microscopy measurements and fractal approach provide a detailed description of the processes occurring during film formation. The characteristics of the fabricated SnS films are potentially useful for design of advanced absorbing layers within thin film solar cells.
Keywords: tin(II) sulfide, thin films, chemical bath deposition, $p$-type conductivity, quantum-chemical calculations, formation mechanism.
@article{NANO_2023_14_6_a9,
     author = {N. S. Kozhevnikova and L. N. Maskaeva and A. N. Enyashin and A. P. Tyutyunnik and O. A. Lipina and I. O. Selyanin and V. F. Markov},
     title = {Surface topology, electrophysical properties and formation mechanism of tin(ii) sulfide thin films},
     journal = {Nanosistemy: fizika, himi\^a, matematika},
     pages = {699--704},
     publisher = {mathdoc},
     volume = {14},
     number = {6},
     year = {2023},
     language = {en},
     url = {http://geodesic.mathdoc.fr/item/NANO_2023_14_6_a9/}
}
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N. S. Kozhevnikova; L. N. Maskaeva; A. N. Enyashin; A. P. Tyutyunnik; O. A. Lipina; I. O. Selyanin; V. F. Markov. Surface topology, electrophysical properties and formation mechanism of tin(ii) sulfide thin films. Nanosistemy: fizika, himiâ, matematika, Tome 14 (2023) no. 6, pp. 699-704. http://geodesic.mathdoc.fr/item/NANO_2023_14_6_a9/