Geodesic
Investigation of boron-doped delta layers in CVD diamond grown on single-sector HPHT substrates
Nanosistemy: fizika, himiâ, matematika, Tome 13 (2022) no. 5, pp. 578-584 Cet article a éte moissonné depuis la source Math-Net.Ru

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This work is devoted to experimental study of boron doped delta layers in CVD diamond. Delta layers with a thickness of 0.8 – 2 nm were grown with a concentration of boron atoms of (1 – 1.7) $\cdot$ 10$^{21}$ cm$^{-3}$, and localized inside undoped defect-free diamond. The layers thickness and boron concentration were measured by secondary ion mass spectrometry (SIMS). The surface density and the Hall mobility of holes, the layer resistance at room temperature, and temperature dependences of these parameters are presented. Performed electrical measurements showed that, despite the perfect (from the point of view of the possibility of quantum effects) profile of delta layers, no significant increase was observed in the hole mobility compared to uniform doping with the same concentration of boron atoms. An explanation is proposed for the results of electrical measurements based on calculations of the delta layer profile and the concentration of delocalized holes depending on the layer thickness. It is discussed which parameters of the boron doped delta layers are needed in order to obtain a significant increase of the hole mobility in heavily doped diamond.
Keywords: CVD diamond, boron delta-doping, electrical measurements, hole mobility. 
@article{NANO_2022_13_5_a12,
     author = {Mikhail A. Lobaev and Anatoly L. Vikharev and Aleksey M. Gorbachev and Dmitry B. Radishev and Ekaterina A. Arkhipova and Mikhail N. Drozdov and Vladimir A. Isaev and Sergey A. Bogdanov and Vladimir A. Kukushkin},
     title = {Investigation of boron-doped delta layers in {CVD} diamond grown on single-sector {HPHT} substrates},
     journal = {Nanosistemy: fizika, himi\^a, matematika},
     pages = {578--584},
     year = {2022},
     volume = {13},
     number = {5},
     language = {en},
     url = {http://geodesic.mathdoc.fr/item/NANO_2022_13_5_a12/}
}
TY  - JOUR
AU  - Mikhail A. Lobaev
AU  - Anatoly L. Vikharev
AU  - Aleksey M. Gorbachev
AU  - Dmitry B. Radishev
AU  - Ekaterina A. Arkhipova
AU  - Mikhail N. Drozdov
AU  - Vladimir A. Isaev
AU  - Sergey A. Bogdanov
AU  - Vladimir A. Kukushkin
TI  - Investigation of boron-doped delta layers in CVD diamond grown on single-sector HPHT substrates
JO  - Nanosistemy: fizika, himiâ, matematika
PY  - 2022
SP  - 578
EP  - 584
VL  - 13
IS  - 5
UR  - http://geodesic.mathdoc.fr/item/NANO_2022_13_5_a12/
LA  - en
ID  - NANO_2022_13_5_a12
ER  - 
%0 Journal Article
%A Mikhail A. Lobaev
%A Anatoly L. Vikharev
%A Aleksey M. Gorbachev
%A Dmitry B. Radishev
%A Ekaterina A. Arkhipova
%A Mikhail N. Drozdov
%A Vladimir A. Isaev
%A Sergey A. Bogdanov
%A Vladimir A. Kukushkin
%T Investigation of boron-doped delta layers in CVD diamond grown on single-sector HPHT substrates
%J Nanosistemy: fizika, himiâ, matematika
%D 2022
%P 578-584
%V 13
%N 5
%U http://geodesic.mathdoc.fr/item/NANO_2022_13_5_a12/
%G en
%F NANO_2022_13_5_a12
Mikhail A. Lobaev; Anatoly L. Vikharev; Aleksey M. Gorbachev; Dmitry B. Radishev; Ekaterina A. Arkhipova; Mikhail N. Drozdov; Vladimir A. Isaev; Sergey A. Bogdanov; Vladimir A. Kukushkin. Investigation of boron-doped delta layers in CVD diamond grown on single-sector HPHT substrates. Nanosistemy: fizika, himiâ, matematika, Tome 13 (2022) no. 5, pp. 578-584. http://geodesic.mathdoc.fr/item/NANO_2022_13_5_a12/