Geodesic
Negative differential resistance in gate all-around spin field effect transistors
Nanosistemy: fizika, himiâ, matematika, Tome 11 (2020) no. 3, pp. 301-306.

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In this paper, novel gate all-around spin field effect transistors (GAA Spin-FETs) with three different channel materials are proposed and their transport properties are presented. The three channel materials used are Indium Arsenide (InAs), Indium Phosphide (InP) and Aluminum Antimonide (AlSb). Based on the type of semiconducting channel, the results are obtained and a comparison of transport properties among these three FETs is made. The proposed device offers both advantages of reduced power dissipation and compact size. The results reveal that the negative differential resistance (NDR) is observed in all modeled devices and the peak to valley current ratio (PVCR) is different in all structures and is maximum in AlSb based field effect transistor. It is expected that these results will find enormous applications in analog electronics and in the design of oscillators. Additionally, the observed results in this study have great potential for the design of various logic gates and digitals circuits.
Keywords: Spin-FET, gate all-around spin field effect transistors, datta-das transistor.
Mots-clés : multi-gate FETs, NDR 
@article{NANO_2020_11_3_a4,
     author = {G. F. A. Malik and M. A. Kharadi and F. A. Khanday and Kh. A. Shah and N. Parveen},
     title = {Negative differential resistance in gate all-around spin field effect transistors},
     journal = {Nanosistemy: fizika, himi\^a, matematika},
     pages = {301--306},
     publisher = {mathdoc},
     volume = {11},
     number = {3},
     year = {2020},
     language = {en},
     url = {http://geodesic.mathdoc.fr/item/NANO_2020_11_3_a4/}
}
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G. F. A. Malik; M. A. Kharadi; F. A. Khanday; Kh. A. Shah; N. Parveen. Negative differential resistance in gate all-around spin field effect transistors. Nanosistemy: fizika, himiâ, matematika, Tome 11 (2020) no. 3, pp. 301-306. http://geodesic.mathdoc.fr/item/NANO_2020_11_3_a4/