Geodesic
Modification of nanoscale thermal oxide films formed on indium phosphide under the influence of tin dioxide
Nanosistemy: fizika, himiâ, matematika, Tome 11 (2020) no. 1, pp. 110-116.

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The kinetic parameters and the limiting stage of the defining process were established by studying the thermal oxidation of SnO$_2$/InP heterostructures (thickness of SnO$_2$ layer $\sim$ 50 nm). It was established that SnO$_2$ does not have a chemical stimulating effect on the film growth rate; however, it is effective as a modifier of their structure and properties. SnO$_2$ provides the formation of nanoscale films with semiconductor properties.
Keywords: nanoscale films, thermal oxidation, tin dioxide.
Mots-clés : indium phosphide 
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     author = {I. Ya. Mittova and V. F. Kostryukov and N. A. Ilyasova and B. V. Sladkopevtsev and A. A. Samsonov},
     title = {Modification of nanoscale thermal oxide films formed on indium phosphide under the influence of tin dioxide},
     journal = {Nanosistemy: fizika, himi\^a, matematika},
     pages = {110--116},
     publisher = {mathdoc},
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     number = {1},
     year = {2020},
     language = {en},
     url = {http://geodesic.mathdoc.fr/item/NANO_2020_11_1_a12/}
}
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I. Ya. Mittova; V. F. Kostryukov; N. A. Ilyasova; B. V. Sladkopevtsev; A. A. Samsonov. Modification of nanoscale thermal oxide films formed on indium phosphide under the influence of tin dioxide. Nanosistemy: fizika, himiâ, matematika, Tome 11 (2020) no. 1, pp. 110-116. http://geodesic.mathdoc.fr/item/NANO_2020_11_1_a12/