Geodesic
Methodology of analyzing the InSb semiconductor quantum dots parameters
Nanosistemy: fizika, himiâ, matematika, Tome 10 (2019) no. 6, pp. 720-724 Cet article a éte moissonné depuis la source Math-Net.Ru

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The investigation of indium antimonide quantum dots has been carried out by the methods of differential normalized tunnel current-voltage characteristics, electron microscopy, particle size analysis and spectral dependence of the absorption coefficient. Qualitatively and quantitatively consistent measurement results were obtained with an error less than 15 %. It is concluded that the analysis of normalized differential tunnel current-voltage characteristics is an effective method of express-analysis that can be used in investigation of quantum-sized objects properties.
Keywords: quantum dots, indium antimonide, differential tunnel current-voltage characteristics, energy spectrum. 
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     author = {A. I. Mikhailov and V. F. Kabanov and M. V. Gavrikov},
     title = {Methodology of analyzing the {InSb} semiconductor quantum dots parameters},
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     number = {6},
     language = {en},
     url = {http://geodesic.mathdoc.fr/item/NANO_2019_10_6_a15/}
}
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A. I. Mikhailov; V. F. Kabanov; M. V. Gavrikov. Methodology of analyzing the InSb semiconductor quantum dots parameters. Nanosistemy: fizika, himiâ, matematika, Tome 10 (2019) no. 6, pp. 720-724. http://geodesic.mathdoc.fr/item/NANO_2019_10_6_a15/