Geodesic
Annealing atmosphere influence on contact resistivity of ohmic Pd/Ge/Au contact to n-GaAs
Nanosistemy: fizika, himiâ, matematika, Tome 9 (2018) no. 6, pp. 789-792.

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We report the results of research for the Pd/Ge/Au ohmic contact resistivity to n-GaAs thermally treated in various gas atmospheres at low temperature. The lowest contact resistivity of about $4\cdot 10^{-6}$ $\Omega\cdot$cm$^2$ was obtained with annealing under a hydrogen atmosphere. The mechanism of the ohmic contact formation upon annealing under a hydrogen atmosphere has been proposed. The achieved results can be used for development of multi-junction solar cells, power semiconductor devices, lasers, and nanowire-based structures sensible to a high temperature treatment.
Keywords: GaAs, ohmic contact, contact resistivity, thermal annealing, solid-phase regrowth. 
@article{NANO_2018_9_6_a12,
     author = {D. M. Mitin and F. Yu. Soldatenkov and A. M. Mozharov and A. A. Vasil'ev and V. V. Neplokh and I. S. Mukhin},
     title = {Annealing atmosphere influence on contact resistivity of ohmic {Pd/Ge/Au} contact to {n-GaAs}},
     journal = {Nanosistemy: fizika, himi\^a, matematika},
     pages = {789--792},
     publisher = {mathdoc},
     volume = {9},
     number = {6},
     year = {2018},
     language = {en},
     url = {http://geodesic.mathdoc.fr/item/NANO_2018_9_6_a12/}
}
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%A F. Yu. Soldatenkov
%A A. M. Mozharov
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%A I. S. Mukhin
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D. M. Mitin; F. Yu. Soldatenkov; A. M. Mozharov; A. A. Vasil'ev; V. V. Neplokh; I. S. Mukhin. Annealing atmosphere influence on contact resistivity of ohmic Pd/Ge/Au contact to n-GaAs. Nanosistemy: fizika, himiâ, matematika, Tome 9 (2018) no. 6, pp. 789-792. http://geodesic.mathdoc.fr/item/NANO_2018_9_6_a12/