Geodesic
Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate
Nanosistemy: fizika, himiâ, matematika, Tome 8 (2017) no. 1, pp. 75-78

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Short channel effects such as DIBL are compared for trigate SOI Junctionless MOSFET with extended and non-extended lateral part of the gate. A trigate SOI JLMOSFET with gate length L$_{\operatorname{gate}}$, a silicon body width W$_{\operatorname{tin}}$ and thickness of 10 nm are simulated. In order to calculate the DIBL, the transfer characteristics of JLMOSFETs was simulated at a donor concentration of $5\cdot10^{19}$cm$^{-3}$ in the silicon body. The equivalent oxide thicknesses of the HfO$_2$ gate insulator used in simulation was 0.55 nm. Simulation result showed the DIBL for the trigate JLMOSFET depended on the length of the lateral part of the gate L$_{\operatorname{ext}}$. DIBL is high for devices with gates having extended lateral parts. This is a result of parasitic source (drain)-gate capacitance coupling which is higher for longer L$_{\operatorname{ext}}$.
Keywords: Junctionless MOSFET, DIBL
Mots-clés : parasitic capacitance. 
@article{NANO_2017_8_1_a10,
     author = {A. E. Atamuratov and M. Khalilloev and A. Abdikarimov and Z. A. Atamuratova and M. Kittler and R. Granzner and F. Schwierz},
     title = {Simulation of {DIBL} effect in junctionless {SOI} {MOSFETs} with extended gate},
     journal = {Nanosistemy: fizika, himi\^a, matematika},
     pages = {75--78},
     publisher = {mathdoc},
     volume = {8},
     number = {1},
     year = {2017},
     language = {en},
     url = {http://geodesic.mathdoc.fr/item/NANO_2017_8_1_a10/}
}
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A. E. Atamuratov; M. Khalilloev; A. Abdikarimov; Z. A. Atamuratova; M. Kittler; R. Granzner; F. Schwierz. Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate. Nanosistemy: fizika, himiâ, matematika, Tome 8 (2017) no. 1, pp. 75-78. http://geodesic.mathdoc.fr/item/NANO_2017_8_1_a10/