Geodesic
Bistable electrical switching and performance of a pentacene-based write once/read many memory device
Nanosistemy: fizika, himiâ, matematika, Tome 7 (2016) no. 4, pp. 643-646 Cet article a éte moissonné depuis la source Math-Net.Ru

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In this paper, the performance of a pentacene-based write once/read many memory device is reported. The IV characteristics of a pentacene device deposited at 5$\mathring{\mathrm{A}}$/s on an ITO-coated glass substrate was studied. This device showed a stable switching from ON to OFF state with an ON-OFF current ratio of nearly 10$^3$ and a retention time of 5$\times$10$^4$ with a switching threshold voltage of 3.9 V. The irreversible switching of this device makes it suitable for write once/read many memory devices. The structural studies of pentacene thin films on glass substrate were also done and the dependence of device performance on grain size is reported. Improved performance of this device due to the addition of C$_{60}$ layer is also discussed.
Keywords: Organic semiconductor, pentacene, thin films, vacuum thermal evaporation, WORM memory. 
@article{NANO_2016_7_4_a13,
     author = {A. G. Gayathri and C. M. Joseph},
     title = {Bistable electrical switching and performance of a pentacene-based write once/read many memory device},
     journal = {Nanosistemy: fizika, himi\^a, matematika},
     pages = {643--646},
     year = {2016},
     volume = {7},
     number = {4},
     language = {en},
     url = {http://geodesic.mathdoc.fr/item/NANO_2016_7_4_a13/}
}
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A. G. Gayathri; C. M. Joseph. Bistable electrical switching and performance of a pentacene-based write once/read many memory device. Nanosistemy: fizika, himiâ, matematika, Tome 7 (2016) no. 4, pp. 643-646. http://geodesic.mathdoc.fr/item/NANO_2016_7_4_a13/